검색결과 : 34건
| No. | Article |
|---|---|
| 1 |
An algorithm to design floating field rings in SiC and Si power diodes and MOSFETs Jaikumar MG, Akshay K, Karmalkar S Solid-State Electronics, 156, 73, 2019 |
| 2 |
Edge termination strategies for a 4 kV 4H-SiC thyristor Brosselard P, Planson D, Scharnholz S, Raynaud C, Zorngiebel V, Lazar M, Chante JP, Spahn E Solid-State Electronics, 50(7-8), 1183, 2006 |
| 3 |
Numerical simulation and optimization for 900V 4H-SiC DiMOSFET fabrication Kim SC, Bahng W, Kim NK, Kim ED, Ayalew T, Grasser T, Selberherr S Materials Science Forum, 483, 793, 2005 |
| 4 |
Effective edge termination design in SiCVJFET Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM Materials Science Forum, 483, 877, 2005 |
| 5 |
Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations Chang SC, Wang SJ, Uang KM, Liou BW Solid-State Electronics, 49(3), 437, 2005 |
| 6 |
Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes Mahajan A, Skromme BJ Solid-State Electronics, 49(6), 945, 2005 |
| 7 |
Edge termination of SiC Schottky diodes with guard rings formed by high energy Boron implantation Vassilevski K, Horsfall AB, Johnson CM, Wright NG Materials Science Forum, 457-460, 989, 2004 |
| 8 |
P-n junction periphery protection of 4H-SiC power p-i-n diodes using epitaxy and dry etching Sarov G, Cholakova T, Kakanakov R Materials Science Forum, 457-460, 1005, 2004 |
| 9 |
Fabrication and characterization of 4H-SiC pn diode with field limiting ring Bahng W, Song GH, Kim HW, Seo KS, Kim NK Materials Science Forum, 457-460, 1013, 2004 |
| 10 |
4H-SiC P-N diode using internal ring(IR) termination technique Song GH, Kim HW, Bahng W, Kim SC, Kim NK Materials Science Forum, 457-460, 1041, 2004 |