검색결과 : 32건
No. | Article |
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1 |
A correlation study of substrate and epitaxial wafer with 4H-N type silicon carbide Zhao LX, Wu HW Journal of Crystal Growth, 507, 109, 2019 |
2 |
Ion induced compositional changes and nanodroplet formation on GaN surface Venugopal V, Upadhyaya K, Kumar K, Shivaprasad SM Applied Surface Science, 315, 440, 2014 |
3 |
Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy Wang JS, Tsai YH, Wang HH, Ke HX, Tong SC, Yang CS, Wu CH, Shen JL Applied Surface Science, 270, 751, 2013 |
4 |
Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate Chen HC, Chen MJ, Liu TC, Yang JR, Shiojiri M Thin Solid Films, 519(1), 536, 2010 |
5 |
A spectroscopic ellipsometric investigation of new critical points of Zn1-xMnxS epilayers Kim DJ, Lee JW, Yu YM, Choi YD Applied Surface Science, 254(16), 5034, 2008 |
6 |
Relevant, systematic variation of morphology and magnetism according to annealing in InMnP : Zn Shon Y, Lee SW, Park CS, Lee S, Jeon HC, Kim DY, Kang TW, Yoon CS, Kim EK, Lee JJ Applied Surface Science, 254(2), 494, 2007 |
7 |
Morphological and electrical properties of InP grown by solid source molecular beam epitaxy Pi B, Shu YC, Lin YW, Sun JM, Qu SC, Yao JH, Xing XD, Xu B, Shu Q, Wang ZG, Xu J Journal of Crystal Growth, 299(2), 243, 2007 |
8 |
Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate Navamathavan R, Ganesan V, Arivuoli D, Attolini G, Pelosi C, Choi CK Applied Surface Science, 253(5), 2973, 2006 |
9 |
Concentration efects on n-GaN schottky diode current-voltage (I-V) characteristics Munir T, AbdulAziz A, Abdullah MJ, Ahmed NM Materials Science Forum, 517, 159, 2006 |
10 |
Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer Shon Y, Jeon HC, Park YS, Lee S, Kwon YH, Lee SJ, Kim DY, Kim HS, Kang TW, Park YJ, Yoon CS, Kim CK, Kim EK, Kim Y, Woo YD Thin Solid Films, 505(1-2), 129, 2006 |