화학공학소재연구정보센터
검색결과 : 32건
No. Article
1 A correlation study of substrate and epitaxial wafer with 4H-N type silicon carbide
Zhao LX, Wu HW
Journal of Crystal Growth, 507, 109, 2019
2 Ion induced compositional changes and nanodroplet formation on GaN surface
Venugopal V, Upadhyaya K, Kumar K, Shivaprasad SM
Applied Surface Science, 315, 440, 2014
3 Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy
Wang JS, Tsai YH, Wang HH, Ke HX, Tong SC, Yang CS, Wu CH, Shen JL
Applied Surface Science, 270, 751, 2013
4 Structure and stimulated emission of a high-quality zinc oxide epilayer grown by atomic layer deposition on the sapphire substrate
Chen HC, Chen MJ, Liu TC, Yang JR, Shiojiri M
Thin Solid Films, 519(1), 536, 2010
5 A spectroscopic ellipsometric investigation of new critical points of Zn1-xMnxS epilayers
Kim DJ, Lee JW, Yu YM, Choi YD
Applied Surface Science, 254(16), 5034, 2008
6 Relevant, systematic variation of morphology and magnetism according to annealing in InMnP : Zn
Shon Y, Lee SW, Park CS, Lee S, Jeon HC, Kim DY, Kang TW, Yoon CS, Kim EK, Lee JJ
Applied Surface Science, 254(2), 494, 2007
7 Morphological and electrical properties of InP grown by solid source molecular beam epitaxy
Pi B, Shu YC, Lin YW, Sun JM, Qu SC, Yao JH, Xing XD, Xu B, Shu Q, Wang ZG, Xu J
Journal of Crystal Growth, 299(2), 243, 2007
8 Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate
Navamathavan R, Ganesan V, Arivuoli D, Attolini G, Pelosi C, Choi CK
Applied Surface Science, 253(5), 2973, 2006
9 Concentration efects on n-GaN schottky diode current-voltage (I-V) characteristics
Munir T, AbdulAziz A, Abdullah MJ, Ahmed NM
Materials Science Forum, 517, 159, 2006
10 Characteristics of diluted magnetic semiconductor for p-type InMnP : Zn epilayer
Shon Y, Jeon HC, Park YS, Lee S, Kwon YH, Lee SJ, Kim DY, Kim HS, Kang TW, Park YJ, Yoon CS, Kim CK, Kim EK, Kim Y, Woo YD
Thin Solid Films, 505(1-2), 129, 2006