화학공학소재연구정보센터
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No. Article
1 Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells
Nicosia G, Goda A, Spinelli AS, Compagnoni CM
Solid-State Electronics, 151, 18, 2019
2 Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories
Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A
Solid-State Electronics, 113, 138, 2015
3 Ceria CMP Slurry for the Construction of Floating Gates in MLC NAND Flash Memory below 51 nm
Kim YH, Kim JW, Kim SK, Paik U
Electrochemical and Solid State Letters, 13(10), H339, 2010
4 Device characteristics of HfON charge-trap layer nonvolatile memory
Lee T, Banerjee SK
Journal of Vacuum Science & Technology B, 28(5), 1005, 2010
5 Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories
Jeon K, Lee S, Kim DM, Kim DH
Solid-State Electronics, 54(5), 557, 2010
6 Modeling of gate-all-around charge trapping SONOS memory cells
Gnani E, Reggiani S, Gnudi A, Baccarani G, Fu J, Singh N, Lo GQ, Kwong DL
Solid-State Electronics, 54(9), 997, 2010
7 Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications
Jeon S
Electrochemical and Solid State Letters, 12(11), H412, 2009
8 Silicon-oxide-high-kappa-oxide-silicon memory using a high-kappa Y2O3 nanocrystal film for flash memory application
Pan TM, Yeh WW
Journal of Vacuum Science & Technology A, 27(4), 700, 2009
9 Full field imprint masks using variable shape beam pattern generators
Selinidis K, Thompson E, Schmid G, Stacey N, Perez J, Maltabes J, Sreenivasan SV, Resnick DJ, Fujii A, Sakai Y, Sasaki S, Hayashi N
Journal of Vacuum Science & Technology B, 26(6), 2410, 2008