화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs
Na KI, Cristoloveanu S, Bae YH, Patruno P, Xiong W, Lee JH
Solid-State Electronics, 53(2), 150, 2009
2 Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs
Rafi JM, Simoen E, Mercha A, Collaert N, Hayama K, Campabadal F, Claeys C
Solid-State Electronics, 51(9), 1201, 2007
3 Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs
Rafi JM, Simoen E, Mercha A, Campabadal F, Claeys C
Solid-State Electronics, 49(9), 1536, 2005