검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor Attolini G, Ponraj JS, Frigeri C, Buffagni E, Ferrari C, Musayeva N, Jabbarov R, Bosi M Applied Surface Science, 360, 157, 2016 |
| 2 |
Epitaxial growth of Si and SiGe at temperatures lower than 500 degrees C with disilane and germane Aubin J, Hartmann JM, Benevent V Thin Solid Films, 602, 36, 2016 |
| 3 |
Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers Bogumilowicz Y, Hartmann JM Thin Solid Films, 557, 4, 2014 |
| 4 |
Fabrication of a-SiGeC:H solar cells using monomethyl germane by suppressing carbon incorporation for narrowing optical bandgap Kim DY, Yunaz IA, Kasashima S, Miyajima S, Konagai M Solar Energy Materials and Solar Cells, 95(3), 829, 2011 |
| 5 |
Metal Organic Chemical Vapor Deposition법을 이용한 Germanium 전구체의 증착 특성 연구 김선희, 김봉준, 김도형, 이준기 Korean Journal of Materials Research, 18(6), 302, 2008 |
| 6 |
Deposition and characterization of mu c-Ge1-xCx thin films grown by hot-wire chemical vapor deposition using organo-germane Yashiki Y, Miyajima S, Yamada A, Konagai M Thin Solid Films, 501(1-2), 202, 2006 |
| 7 |
Epitaxy solutions for Ge MOS technology Leys FE, Bonzom R, Loo R, Richard O, De Jaeger B, Van Steenbergen J, Dessein K, Conard T, Rip J, Bender H, Vandervorst W, Meuris M, Caymax M Thin Solid Films, 508(1-2), 292, 2006 |
| 8 |
Interactions of germanium atoms with silica surfaces Stanley SK, Coffee SS, Ekerdt JG Applied Surface Science, 252(4), 878, 2005 |
| 9 |
First principles total energy studies of the adsorption of germane on Ge(001)-c(2x4) Cocoletzi GH, Hernandez PH, Takeuchi N Thin Solid Films, 490(2), 196, 2005 |
| 10 |
GeH4 adsorption on Si(001) at RT: transfer of H atoms to Si sites and atomic exchange between Si and Ge Murata T, Suemitsu M Applied Surface Science, 224(1-4), 179, 2004 |