검색결과 : 10건
No. | Article |
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1 |
Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration Liu FY, Diab A, Ionica I, Akarvardar K, Hobbs C, Ouisse T, Mescot X, Cristoloveanu S Solid-State Electronics, 90, 65, 2013 |
2 |
Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template Kuo CH, Chang LC, Chou HM Journal of the Electrochemical Society, 158(10), H961, 2011 |
3 |
Heavily Boron-Doped Hydrogenated Polycrystalline Ge Thin Films Prepared by Cosputtering Tsao CY, Huang JL, Hao XJ, Campbell P, Green MA Electrochemical and Solid State Letters, 13(10), H354, 2010 |
4 |
Efficient triplet exciton confinement of white organic light-emitting diodes using a heavily doped phosphorescent blue emitter Lee SJ, Seo JH, Kim JH, Kim HM, Lee KH, Yoon SS, Kim YK Thin Solid Films, 518(22), 6184, 2010 |
5 |
Photoluminescence properties of polycrystalline AgGaTe2 Krustok J, Jagomagi A, Grossberg M, Raudoja J, Danilson M Solar Energy Materials and Solar Cells, 90(13), 1973, 2006 |
6 |
Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S Solid-State Electronics, 50(4), 587, 2006 |
7 |
Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts Dixit A, Anil KG, Collaert N, Zimmerman P, Jurczak M, De Meyer K Solid-State Electronics, 50(7-8), 1466, 2006 |
8 |
Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process Matsuzaki Y, Yamada A, Konagai M Journal of Crystal Growth, 209(2-3), 509, 2000 |
9 |
GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10(20) cm(-3) grown by solid-source molecular beam epitaxy using CBr4 Micovic M, Nordquist C, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ Journal of Vacuum Science & Technology B, 16(3), 972, 1998 |
10 |
Etch-Stop Techniques for Micromachining Collins SD Journal of the Electrochemical Society, 144(6), 2242, 1997 |