화학공학소재연구정보센터
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No. Article
1 Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration
Liu FY, Diab A, Ionica I, Akarvardar K, Hobbs C, Ouisse T, Mescot X, Cristoloveanu S
Solid-State Electronics, 90, 65, 2013
2 Regrowth of High Quality Heavily Si-Doped nGaN Utilizing Nano-Rod GaN Template
Kuo CH, Chang LC, Chou HM
Journal of the Electrochemical Society, 158(10), H961, 2011
3 Heavily Boron-Doped Hydrogenated Polycrystalline Ge Thin Films Prepared by Cosputtering
Tsao CY, Huang JL, Hao XJ, Campbell P, Green MA
Electrochemical and Solid State Letters, 13(10), H354, 2010
4 Efficient triplet exciton confinement of white organic light-emitting diodes using a heavily doped phosphorescent blue emitter
Lee SJ, Seo JH, Kim JH, Kim HM, Lee KH, Yoon SS, Kim YK
Thin Solid Films, 518(22), 6184, 2010
5 Photoluminescence properties of polycrystalline AgGaTe2
Krustok J, Jagomagi A, Grossberg M, Raudoja J, Danilson M
Solar Energy Materials and Solar Cells, 90(13), 1973, 2006
6 Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions
Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S
Solid-State Electronics, 50(4), 587, 2006
7 Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts
Dixit A, Anil KG, Collaert N, Zimmerman P, Jurczak M, De Meyer K
Solid-State Electronics, 50(7-8), 1466, 2006
8 Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process
Matsuzaki Y, Yamada A, Konagai M
Journal of Crystal Growth, 209(2-3), 509, 2000
9 GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10(20) cm(-3) grown by solid-source molecular beam epitaxy using CBr4
Micovic M, Nordquist C, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ
Journal of Vacuum Science & Technology B, 16(3), 972, 1998
10 Etch-Stop Techniques for Micromachining
Collins SD
Journal of the Electrochemical Society, 144(6), 2242, 1997