검색결과 : 5건
No. | Article |
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1 |
Influence of the compensation level on the performance of p-type crystalline silicon solar cells: Theoretical calculations and experimental study Xiao CQ, Yang DR, Yu XG, Gu X, Que DL Solar Energy Materials and Solar Cells, 107, 263, 2012 |
2 |
Modeling of lattice site-dependent incomplete ionization in a-SiC devices Ayalew T, Grasser T, Kosina H, Selberherr S Materials Science Forum, 483, 845, 2005 |
3 |
Optimization of vertical silicon carbide field effect transistors towards a cost attractive SiC power switch Friedrichs P, Elpelt R, Schomer R, Mitlehner H, Stephani D Materials Science Forum, 457-460, 1201, 2004 |
4 |
Dynamic and steady-state description of incomplete ionization in 4H-SiC power diodes under turn-off Martinez A, Lindefelt U Materials Science Forum, 338-3, 1335, 2000 |
5 |
Comparison of 5 kV 4H-SiC N-channel and P-channel IGBTs Wang J, Williams BW, Madathil SE, Desouza MM Materials Science Forum, 338-3, 1411, 2000 |