| 1 |
Crystal orientation-dependent activity of tungsten-based catalysts for selective catalytic reduction of NOx with NH3
Xu YF, Wu XD, Cao L, Ma Y, Ran R, Si ZC, Weng D, Ma ZR, Wang BD
Journal of Catalysis, 375, 294, 2019 |
| 2 |
Growth of GaN films on PLD-deposited TaC substrates
Kirchner KW, Derenge MA, Zheleva TS, Vispute RD, Jones KA
Journal of Crystal Growth, 312(19), 2661, 2010 |
| 3 |
Rare-earth mixed oxide thin films as 100% lattice match buffer layers for YBa2Cu3O7-x coated conductors
Arda L, Heiba ZK
Thin Solid Films, 518(12), 3345, 2010 |
| 4 |
In situ characterization of the heterointerfaces between SrO films and dangling-bond-terminated Si surfaces
Asaoka H, Yamazaki T, Yamamoto H, Shamoto S
Thin Solid Films, 508(1-2), 175, 2006 |
| 5 |
Interface-controlled Gd2O3/GaAs system for ferroelectric memory application
Yang JK, Kim WS, Park HH
Applied Surface Science, 216(1-4), 203, 2003 |
| 6 |
Structural characterization of Al1-xInxN lattice-matched to GaN
Kariya M, Nitta S, Yamaguchi S, Kashima T, Kato H, Amano H, Akasaki I
Journal of Crystal Growth, 209(2-3), 419, 2000 |
| 7 |
Atomic layer epitaxy growth of ZnSxSe1-x epitaxial layers lattice-matched to Si substrates
Chen NT, Yokoyama M, Ueng HY
Journal of Crystal Growth, 216(1-4), 152, 2000 |
| 8 |
The effect of carbon content on the minority carrier lifetime in lattice-matched p(+)-Si/p-SiGeC/n-Si/n(+)-Si diodes
Shivaram R, Niu GF, Cressler JD, Croke ET
Solid-State Electronics, 44(3), 559, 2000 |
