| 1 |
Minority carrier lifetime of Ge film epitaxial grown on a large-grain seed layer on glass
Nishida T, Nakata M, Suemasu T, Toko K
Thin Solid Films, 681, 98, 2019 |
| 2 |
Interfacial kinetics in nanosized Au/Ge films: An in situ TEM study
Kryshtal AP, Minenkov AA, Ferreira PJ
Applied Surface Science, 409, 343, 2017 |
| 3 |
Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors
Kim HY, Seok KH, Chae HJ, Lee SK, Lee YH, Joo SK
Solid-State Electronics, 132, 73, 2017 |
| 4 |
Influence of the metal-induced crystallization on the structural and electrochemical properties of sputtered LiCoO2 thin films
Joo H, Lee H, Cho G, Nam T, Huh S, Choi B, Jueong H, Noh J
Thin Solid Films, 641, 53, 2017 |
| 5 |
Low-temperature (<= 300 degrees C) formation of orientation-controlled large-grain (>= 10 mu m) Ge-rich SiGe on insulator by gold-induced crystallization
Sadoh T, Park JH, Aoki R, Miyao M
Thin Solid Films, 602, 3, 2016 |
| 6 |
Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator
Toko K, Oya N, Nakata M, Suemasu T
Thin Solid Films, 616, 316, 2016 |
| 7 |
TDPAC and first-principles study of electronic and structural properties of a Pd-vacancy complex in undoped germanium
Abiona AA, Kemp W, Timmers H
Current Applied Physics, 15(3), 319, 2015 |
| 8 |
Effect of Au on the crystallization of germanium thin films by electron-beam evaporation
Eygi ZD, Kulakci M, Turan R
Applied Surface Science, 318, 116, 2014 |
| 9 |
TiO2 thin film crystallization temperature lowered by Cu-induced solid phase crystallization
Yang C, Hirose Y, Nakao S, Hasegawa T
Thin Solid Films, 553, 17, 2014 |
| 10 |
Sn-induced low-temperature (similar to 150 degrees C) crystallization of Ge on insulator
Ooato A, Suzuki T, Park JH, Miyao M, Sadoh T
Thin Solid Films, 557, 155, 2014 |
