| 1 |
Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states
Smolyakov DA, Tarasov AS, Yakovlev IA, Masyugin AN, Volochaev MN, Bondarev IA, Kosyrev NN, Volkov NV
Thin Solid Films, 671, 18, 2019 |
| 2 |
Band-Bending in Organic Semiconductors: the Role of Alkali-Halide Interlayers
Wang HB, Amsalem P, Heimel G, Salzmann I, Koch N, Oehzelt M
Advanced Materials, 26(6), 925, 2014 |
| 3 |
Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films
dos Santos SG, Sonnenberg V, Hora WG, da Silva DM, Kassab LRP
Thin Solid Films, 520(7), 2695, 2012 |
| 4 |
Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization
Kita K, Takahashi T, Nomura H, Suzuki S, Nishimura T, Toriumi A
Applied Surface Science, 254(19), 6100, 2008 |
| 5 |
Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure
Ozdemir O, Atilgan I, Akaoglu B, Sel K, Katircioglu B
Thin Solid Films, 497(1-2), 149, 2006 |
| 6 |
High-thermal-stability (HfO2)(1-x) (Al2O3)(x) film fabricated by dual-beam laser ablation
Li Q, Wang SJ, Ng TH, Chim WK, Huan ACH, Ong CK
Thin Solid Films, 504(1-2), 45, 2006 |
| 7 |
Effect of temperature on the transfer characteristic of a 0.5 mu m-gate Si : SiGe depletion-mode n-MODFET
Gaspari V, Fobelets K, Velazquez-Perez JE, Ferguson R, Michelakis K, Despotopoulos S, Papavassilliou C
Applied Surface Science, 224(1-4), 390, 2004 |
| 8 |
Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx
Pic N, Glachant A, Nitsche S, Hoarau JY, Goguenheim D, Vuillaume D, Sibai A, Chaneliere C
Solid-State Electronics, 45(8), 1265, 2001 |
