| 1 |
Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SiC
Wagner A, Schulz D, Doerschel J
Materials Science Forum, 483, 109, 2005 |
| 2 |
Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition
Fujiwara H, Danno K, Kimoto T, Tojo T, Matsunami H
Materials Science Forum, 457-460, 205, 2004 |
| 3 |
HTCVD grown semi-insulating SiC substrates
Ellison A, Magnusson B, Son NT, Storasta L, Janzen E
Materials Science Forum, 433-4, 33, 2002 |
| 4 |
Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes
Kimoto T, Danno K, Fujihira K, Shiomi H, Matsunami H
Materials Science Forum, 433-4, 197, 2002 |
| 5 |
Investigation of a PVT SiC-growth set-up modified by an additional gas flow
Straubinger TL, Wellmann PJ, Winnacker A
Materials Science Forum, 353-356, 33, 2001 |
| 6 |
Micropipe closing via thick 4H-SiC epitaxial growth involving structural transformation of screw dislocations
Kamata I, Tsuchida H, Jikimoto T, Izumi K
Materials Science Forum, 353-356, 311, 2001 |
