화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)
Lefranc P, Planson D, Morel H, Bergogne D
Solid-State Electronics, 53(9), 944, 2009
2 The impact of the intrinsic and extrinsic resistances of double gate SOI on RF performance
Lim TC, Armstrong GA
Solid-State Electronics, 50(5), 774, 2006
3 Parameter sensitivity for optimal design of 65 nm node double gate SOI transistors
Lim TC, Armstrong GA
Solid-State Electronics, 49(6), 1034, 2005
4 Impact of technology parameters on device performance of UTB-SOI CMOS
Schulz T, Pacha C, Luyken RJ, Stadele M, Hartwich J, Dreeskornfeld L, Landgraf E, Kretz J, Rosner W, Specht M, Hofmann F, Risch L
Solid-State Electronics, 48(4), 521, 2004
5 Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGeHBTs
Malm BG, Ostling M
Solid-State Electronics, 46(10), 1567, 2002