| 1 |
Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors
Jia YF, Lv HL, Song QW, Tang XY, Xiao L, Wang LY, Tang GM, Zhang YM, Zhang YM
Applied Surface Science, 397, 175, 2017 |
| 2 |
Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO2 capacitors
Filip LD, Pintilie I, Nistor LC, Svensson BG
Thin Solid Films, 545, 22, 2013 |
| 3 |
Observation and characterization of near-interface oxide traps in 3C-SiC MOS structures by quasi-static I-V method
Constant A, Godignon P
Solid-State Electronics, 63(1), 70, 2011 |
| 4 |
Interface characterization and current conduction in HfO2-gated MOS capacitors
Chen HW, Chiu FC, Liu CH, Chen SY, Huang HS, Juan PC, Hwang L
Applied Surface Science, 254(19), 6112, 2008 |
| 5 |
Measurement of liquid concentration fields near interface with cocurrent gas-liquid flow absorption using holographic interferometry
Guo Y, Yuan XG, Zeng AW, Yu GC
Chinese Journal of Chemical Engineering, 14(6), 747, 2006 |
| 6 |
The search for near interface oxide traps - First-principles calculations on intrinsic SiO2 defects
Knaup JM, Deak P, Gali A, Hajnal Z, Frauenheim T, Choyke JW
Materials Science Forum, 483, 569, 2005 |
| 7 |
Electrically active traps at the 4H-SiC/SiO2 interface responsible for the limitation of the channel mobility
Bassler M, Afanas'ev VV, Pensl G, Schulz M
Materials Science Forum, 338-3, 1065, 2000 |
| 8 |
MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation
Yano H, Kimoto T, Matsunami H, Bassler M, Pensl G
Materials Science Forum, 338-3, 1109, 2000 |
