검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal Perez R, Mestres N, Tournier D, Jorda X, Vellvehi M, Godignon P Materials Science Forum, 483, 945, 2005 |
| 2 |
A highly effective edge termination design for SiC planar high power devices Perez R, Mestres N, Blanque S, Tournier D, Jorda X, Godignon P, Nipoti R Materials Science Forum, 457-460, 1253, 2004 |
| 3 |
High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation Negoro Y, Miyamoto N, Kimoto T, Matsunami H Materials Science Forum, 389-3, 1273, 2002 |
| 4 |
Electroluminescence analysis of Al+ and B+ implanted pn diodes Fujisawa H, Tsuji T, Izumi S, Ueno K, Kamata I, Tsuchida T, Jikimoto T, Izumi K Materials Science Forum, 389-3, 1297, 2002 |
| 5 |
An effective high-voltage termination for SiC planar pn junctions for use in high-voltage devices and UV detectors Brezeanu G, Badila M, Godignon P, Millan J, Udrea F, Mihaila A, Amaratunga G Materials Science Forum, 389-3, 1301, 2002 |
| 6 |
Reliability of 4H-SiC p-n diodes on LPE grown layers Sarov G, Kakanakov R, Cholakova T, Kassamakova L, Hristeva N, Lepoeva G, Philipova P, Kuznetsov N, Zekentes K Materials Science Forum, 433-4, 929, 2002 |
| 7 |
Electroluminescence from implanted and epitaxially grown pn-diodes Carlsson FHC, Storasta L, Hemmingsson C, Bergman JP, Janzen E Materials Science Forum, 338-3, 687, 2000 |