검색결과 : 194건
| No. | Article |
|---|---|
| 1 |
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(001) wafers Meduna M, Kreiliger T, Mauceri M, Puglisi M, Mancarella F, La Via F, Crippa D, Miglio L, von Kanel H Journal of Crystal Growth, 507, 70, 2019 |
| 2 |
Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers Niu YX, Tang XY, Wu PF, Kong LY, Li Y, Xia JH, Tian HL, Tian L, Tian LX, Zhang WT, Jia RX, Yang F, Wu JM, Pan Y, Zhang YM Journal of Crystal Growth, 507, 143, 2019 |
| 3 |
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 507, 175, 2019 |
| 4 |
MOCVD growth of beta-FeSi2 film on modified Si surface by silver and enhancement of luminescence Akiyama K, Nojima S, Takahashi R, Matsumoto Y, Funakubo H Journal of Crystal Growth, 506, 131, 2019 |
| 5 |
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG Journal of Crystal Growth, 505, 1, 2019 |
| 6 |
3C-SiC grown on Si by using a Si1-xGex buffer layer Zimbone M, Zielinski M, Barbagiovanni EG, Calabretta C, La Via F Journal of Crystal Growth, 519, 1, 2019 |
| 7 |
Thermomigration of molten Cr-Si-C alloy in 4H-SiC at 1873-2273 K Kawanishi S, Yoshikawa T, Shibata H Journal of Crystal Growth, 518, 73, 2019 |
| 8 |
Characterization of double Shockley-type stacking faults formed in lightly doped 4H-SiC epitaxial films Yamashita T, Hayashi S, Naijo T, Momose K, Osawa H, Senzaki J, Kojima K, Kato T, Okumura H Journal of Crystal Growth, 490, 89, 2018 |
| 9 |
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC Niu YX, Tang XY, Sang L, Li Y, Kong LY, Tian L, Tian HL, Wu PF, Jia RX, Yang F, Wu JM, Pan Y, Zhang YM Journal of Crystal Growth, 504, 37, 2018 |
| 10 |
Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport Suo H, Eto K, Ise T, Tokuda Y, Osawa H, Tsuchida H, Kato T, Okumura H Journal of Crystal Growth, 498, 224, 2018 |