| 1 |
Shape-dependent optical properties of self-assembled InAs/GaAs quantum dots
Kim JS, Lee CR, Lee JI, Leem JY
Journal of Crystal Growth, 289(1), 68, 2006 |
| 2 |
CBr4 and Be heavily doped InGaAs grown in a production MBE system
Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F
Journal of Crystal Growth, 278(1-4), 600, 2005 |
| 3 |
Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
Shang XZ, Guo LW, Wu SD, Niu PJ, Huang Q, Zhou JM
Journal of Crystal Growth, 262(1-4), 14, 2004 |
| 4 |
Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources
Zhang DH, Sun L, Yoon SF
Journal of Crystal Growth, 268(3-4), 401, 2004 |
| 5 |
Growth temperature dependence and study of multilayer self-assembled GaInNAs/GaAsN quantum dots grown by solid source molecular beam epitaxy
Yew KC, Yoon SF, Sun ZZ
Journal of Crystal Growth, 271(1-2), 8, 2004 |
| 6 |
InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
Putyato MA, Preobrazhenskii VV, Semyagin BR, Bolkhovityanov YB, Gilinsky AM, Gutakousky AK, Revenko MA, Pchelyakov OP, Feklin DF
Journal of Crystal Growth, 247(1-2), 23, 2003 |
| 7 |
Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy
Yew KC, Yoon SF, Sun ZZ, Wang SZ
Journal of Crystal Growth, 247(3-4), 279, 2003 |
| 8 |
Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy
Sun ZZ, Yoon SF, Yew KC, Loke WK, Wang SZ, Ng TK
Journal of Crystal Growth, 242(1-2), 109, 2002 |
| 9 |
Strained GaInAsP/InP multiple quantum well structures grown by solid source molecular beam epitaxy
Sun L, Zhang DH
Journal of Crystal Growth, 245(1-2), 9, 2002 |
| 10 |
InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy
Radhakrishnan K, Yuan K, Zheng HQ
Solid-State Electronics, 46(6), 877, 2002 |
