검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers Bera MK, Mahata C, Bhattacharya S, Chakraborty AK, Armstrong BM, Gamble HS, Maiti CK Applied Surface Science, 255(5), 2971, 2008 |
| 2 |
Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H(+) irradiation-assisted Ge condensation method Tanaka M, Kenjo A, Sadoh T, Miyao M Thin Solid Films, 517(1), 248, 2008 |
| 3 |
Comprehensive study of low temperature (< 1000 degrees C) oxidation process in SiGe/SOI structures Tanaka M, Ohka T, Sadoh T, Miyao M Thin Solid Films, 517(1), 251, 2008 |
| 4 |
Thickness-dependent stress-relaxation in thin SGOI structures and its improvement Tanaka M, Tsunoda S, Sadoh T, Enokida T, Ninomiya M, Nakamae M, Miyao M Thin Solid Films, 508(1-2), 247, 2006 |
| 5 |
Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator Nishisaka M, Shirata O, Sakamoto D, Enokida T, Hagino H, Asano T Thin Solid Films, 508(1-2), 256, 2006 |
| 6 |
Characterization of As+ ion-implanted layers in strained-Si/SiGe/Si hetero-structures Ishida T, Irieda S, Inada T, Sugii N Applied Surface Science, 224(1-4), 82, 2004 |
| 7 |
Simulation and modelling of transport properties in strained-Si and strained-Si/SiGe-on-insulator MOSFETs Roldan JB, Gamiz F Solid-State Electronics, 48(8), 1347, 2004 |
| 8 |
Investigation of strained Si/SiGe devices by MC simulation Jungemann C, Subba N, Goo JS, Riecobene C, Xiang Q, Meinerzhagen B Solid-State Electronics, 48(8), 1417, 2004 |
| 9 |
Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications Kallfass I, Brazil TJ, OhAnnaidh B, Abele P, Hackbarth T, Zeuner M, Konig U, Schumacher H Solid-State Electronics, 48(8), 1433, 2004 |
| 10 |
Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Fobelets K, Kemhadjian HA Solid-State Electronics, 47(8), 1289, 2003 |