검색결과 : 92건
| No. | Article |
|---|---|
| 1 |
On the C-V characteristics of nanoscale strained gate-all-around Si/SiGe MOSFETs Kumari A, Kumar S, Sharma TK, Das MK Solid-State Electronics, 154, 36, 2019 |
| 2 |
Study on the influence of gamma-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET Hao MR, Hu HY, Wang B, Liao CG, Kang HY, Su H Solid-State Electronics, 133, 45, 2017 |
| 3 |
Experimental demonstration of improved analog device performance of nanowire-TFETs Schulte-Braucks C, Richter S, Knoll L, Selmi L, Zhao QT, Mantl S Solid-State Electronics, 113, 179, 2015 |
| 4 |
Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs Sun W, Shin H Solid-State Electronics, 94, 23, 2014 |
| 5 |
Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Bourdelle KK, Hartmann JM, Zhao QT, Mantl S Solid-State Electronics, 97, 76, 2014 |
| 6 |
Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics Knoll L, Richter S, Nichau A, Trellenkamp S, Schafer A, Wirths S, Blaeser S, Buca D, Bourdelle KK, Zhao QT, Mantl S Solid-State Electronics, 98, 32, 2014 |
| 7 |
Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study Kumar M, Dubey S, Tiwari PK, Jit S Current Applied Physics, 13(8), 1778, 2013 |
| 8 |
Analytical model for quasi-static C-V characteristics of strained-Si/SiGe pMOS capacitor Wang B, Zhang HM, Hu HY, Shu B, Zhou CY, Li YC Solid-State Electronics, 79, 258, 2013 |
| 9 |
Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths Hsu HW, Lin KC, Lee CC, Twu MJ, Huang HS, Chen SY, Peng MR, Teng HH, Liu CH Thin Solid Films, 544, 120, 2013 |
| 10 |
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source Zhao QT, Yu WJ, Zhang B, Schmidt M, Richter S, Buca D, Hartmann JM, Luptak R, Fox A, Bourdelle KK, Mantl S Solid-State Electronics, 74, 97, 2012 |