검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Consistent low-field mobility modeling for advanced MOS devices Stanojevic Z, Baumgartner O, Filipovic L, Kosina H, Karner M, Kernstock C, Prause P Solid-State Electronics, 112, 37, 2015 |
| 2 |
Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films Liu JL, Li CM, Guo JC, Zhu RH, Chen LX, Wei JJ, Hei LF, Wang JJ, Feng ZH, Guo H, Lv FX Applied Surface Science, 287, 304, 2013 |
| 3 |
High Contrast Superlens Lithography Engineered by Loss Reduction Liu H, Wang B, Ke L, Deng J, Choy CC, Zhang MS, Shen L, Maier SA, Teng JH Advanced Functional Materials, 22(18), 3777, 2012 |
| 4 |
Mobility analysis of surface roughness scattering in FinFET devices Lee JW, Jang D, Mouis M, Kim GT, Chiarella T, Hoffmann T, Ghibaudo G Solid-State Electronics, 62(1), 195, 2011 |
| 5 |
Extraction of optical properties of flat and surface-textured transparent conductive oxide films in a broad wavelength range Sap JA, Isabella O, Jager K, Zeman M Thin Solid Films, 520(3), 1096, 2011 |
| 6 |
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics Alatise O, Olsen S, O'Neill A Solid-State Electronics, 54(6), 628, 2010 |
| 7 |
A universal electron mobility model of strained Si MOSFETs based on variational wave functions Liang RR, Li DB, Xu J Solid-State Electronics, 52(6), 863, 2008 |
| 8 |
Electron scattering mechanisms in indium-tin-oxide thin films prepared at the various process conditions Lee HC Applied Surface Science, 252(10), 3428, 2006 |
| 9 |
Calculation of the Average Interface Field in Inversion-Layers Using Zero-Temperature Greens-Function Formalism Vasileska D, Bordone P, Eldridge T, Ferry DK Journal of Vacuum Science & Technology B, 13(4), 1841, 1995 |
| 10 |
Epitaxial Metal Silicides - Interface Mapping by Scanning Probe Techniques Vonkanel H, Lee EY, Sirringhaus H, Kafader U Thin Solid Films, 267(1-2), 89, 1995 |