| 1 |
Rapid oxidation of silicon using 126 nm excimer radiation at low pressure
Fang Q, Zhang JY, Boyd IW
Applied Surface Science, 208, 369, 2003 |
| 2 |
Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer
Matsuo N, Takami Y, Kitagawa Y
Solid-State Electronics, 46(4), 577, 2002 |
| 3 |
In situ measurements of ultrathin silicon oxide dissolution rates
Chopra D, Suni II
Thin Solid Films, 323(1-2), 170, 1998 |
| 4 |
Stressing and High-Field Transport Studies on Device-Grade SiO2 by Ballistic-Electron-Emission Spectroscopy
Ludeke R, Wen HJ, Cartier E
Journal of Vacuum Science & Technology B, 14(4), 2855, 1996 |
| 5 |
Time-Dependent Dielectric-Breakdown Measurements on Rpecvd and Thermal Oxides
Silvestre C, Hauser JR
Thin Solid Films, 277(1-2), 101, 1996 |
| 6 |
Interpretation of Spectroscopic Ellipsometry Measurements of Ultrathin Dielectric Layers on Silicon - Impact of Accuracy of the Silicon Optical-Constants
Tonova D, Depas M, Vanhellemont J
Thin Solid Films, 288(1-2), 64, 1996 |
| 7 |
Continuous Ultra-Dry Process for Enhancing the Reliability of Ultrathin Silicon-Oxide Films in Metal-Oxide Semiconductors
Yamada H
Journal of Vacuum Science & Technology B, 12(6), 3112, 1994 |
