화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 degrees C
Heya A, Minamikawa T, Niki T, Minami S, Masuda A, Umemoto H, Matsuo N, Matsumura H
Thin Solid Films, 516(10), 3000, 2008
2 Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition
Chen Y, Kimoto T, Takeuchi Y, Malhan RK, Matsunami H
Materials Science Forum, 457-460, 189, 2004