검색결과 : 2건
No. | Article |
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1 |
Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 degrees C Heya A, Minamikawa T, Niki T, Minami S, Masuda A, Umemoto H, Matsuo N, Matsumura H Thin Solid Films, 516(10), 3000, 2008 |
2 |
Homoepitaxial growth of 4H-SiC on trenched substrates by chemical vapor deposition Chen Y, Kimoto T, Takeuchi Y, Malhan RK, Matsunami H Materials Science Forum, 457-460, 189, 2004 |