검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si Wang BG, Harris TR, Hogsed MR, Yeo YK, Ryu MY, Kouvetakis J Thin Solid Films, 673, 63, 2019 |
| 2 |
Nonideal anion displacement, band gap variation, and valence band splitting in Cu-In-Se compounds Philip RR, Pradeep B Thin Solid Films, 472(1-2), 136, 2005 |
| 3 |
Temperature dependence of band gap and photocurrent properties for the AgInS2 epilayers grown by hot wall epitaxy You SH, Hong KJ, Lee BJ, Jeong TS, Youn CJ, Park JS, Baek SN Journal of Crystal Growth, 245(3-4), 261, 2002 |
| 4 |
Hot wall epitaxy방법에 의한 AgInS 2 박막의 성장과 광전류 특성 김혜숙, 홍광준, 정준우, 방진주, 김소형, 정태수, 박진성 Korean Journal of Materials Research, 12(7), 587, 2002 |