검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Evolution of fluorine and boron profiles during annealing in crystalline Si Lopeza P, Pelaz L, Duffy R, Meunier-Beillard P, Roozeboom F, van der Tak K, Breimer P, van Berkum JGM, Verheijen MA, Kaiser M Journal of Vacuum Science & Technology B, 26(1), 377, 2008 |
| 2 |
Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance Duffy R, Curatola G, Pawlak BJ, Doornbos G, van der Tak K, Breimer P, van Berkum JGM, Roozeboom F Journal of Vacuum Science & Technology B, 26(1), 402, 2008 |
| 3 |
Characterization of laminated CeO2-HfO2 high-k gate dielectrics grown by pulsed laser deposition Karakaya K, Zinine A, van Berkum JGM, Verheijen MA, Rittersma ZM, Rijnders G, Blank DHA Journal of the Electrochemical Society, 153(10), F233, 2006 |
| 4 |
HfSiO4 dielectric layers deposited by ALD using HfCl4 and NH2(CH2)(3)Si(OC2H5)(3) precursors Rittersma ZM, Roozeboom F, Verheijen MA, van Berkum JGM, Dao T, Snijders JHM, Vainonen-Ahlgren E, Tois E, Tuominen M, Haukka S Journal of the Electrochemical Society, 151(11), C716, 2004 |
| 5 |
Quantitative depth profiling of SiOxNy layers on Si van Berkum JGM, Hopstaken MJP, Snijders JHM, Tamminga Y, Cubaynes FN Applied Surface Science, 203, 414, 2003 |
| 6 |
Characterization of low-energy (100 eV 10 keV) boron ion implantation Collart EJH, Weemers K, Gravesteijn DJ, van Berkum JGM Journal of Vacuum Science & Technology B, 16(1), 280, 1998 |
| 7 |
Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants : Problems and solutions van Berkum JGM, Collart EJH, Weemers K, Gravesteijn DJ, Iltgen K, Benninghoven A, Niehuis E Journal of Vacuum Science & Technology B, 16(1), 298, 1998 |