| 2619 - 2645 |
Plasma deposition of optical films and coatings: A review
Martinu L, Poltras D |
| 2646 - 2660 |
Search for improved transparent conducting oxides: A fundamental investigation of CdO, Cd2SnO4, and Zn2SnO4
Coutts TJ, Young DL, Li X, Mulligan WP, Wu X |
| 2661 - 2668 |
Mechanisms for CF2 radical generation and loss on surfaces in fluorocarbon plasmas
Zhang D, Kushner MJ |
| 2669 - 2679 |
Transient plasma-induced emission analysis of laser-desorbed species during Cl-2 plasma etching of Si
Choe JY, Fuller NCM, Donnelly VM, Herman IP |
| 2680 - 2684 |
Surface loss coefficients of CFx and F radicals on stainless steel
Singh H, Coburn JW, Graves DB |
| 2685 - 2698 |
Ion and substrate effects on surface reactions of CF2 using C2F6, C2F6/H-2, and hexafluoropropylene oxide plasmas
Butoi CI, Mackie NM, Williams KL, Capps NE, Fisher ER |
| 2699 - 2705 |
Carbon deposition by electron beam cracking of hydrocarbons on Ta2Zn3O8 thin film phosphors
Kondoleon CA, Rack P, Lambers E, Holloway P |
| 2706 - 2708 |
Change in surface roughness with the thickness of TiO2 film grown on MgO(001) by Ar-ion beam sputtering
Uchitani T, Maki K |
| 2709 - 2714 |
A conductance model (approach) for kinetic studies: The Ti-Ta-Si system
Pelleg J, Rubinovich L |
| 2715 - 2721 |
Microwave plasma nitriding of a low-alloy steel
Hovorka D, Vlcek J, Cerstvy R, Musil J, Belsky P, Ruzicka M, Han JG |
| 2722 - 2727 |
Measurement of beam-gas scattering lifetime in Pohang light source
Park CD, Lee TY, Bae IH, Chung SM |
| 2728 - 2732 |
Estimation of the TEOS dissociation coefficient by electron impact
Vallee C, Rhallabi A, Granier A, Goullet A, Turban G |
| 2733 - 2737 |
Studies on plasma-nitrided iron by scanning electron microscopy, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy
Miola EJ, de Souza SD, Nascente PAP, Olzon-Dionysio M, Olivieri CA, Spinelli D |
| 2738 - 2741 |
Scanning tunneling microscopy study of the Er/Ge(111) c(2X8) interface
Pelletier S, Ehret E, Gautier B, Palmino F, Labrune JC |
| 2742 - 2748 |
Etching of xerogel in high-density fluorocarbon plasmas
Standaert TEFM, Joseph EA, Oehrlein GS, Jain A, Gill WN, Wayner PC, Plawsky JL |
| 2749 - 2758 |
High density plasma oxide etching using nitrogen trifluoride and acetylene
Pruette L, Karecki S, Chatterjee R, Reif R, Sparks T, Vartanian V |
| 2759 - 2769 |
Reaction layer dynamics in ion-assisted Si/XeF2 etching: Temperature dependence
Sebel PGM, Hermans LJF, Beijerinck HCW |
| 2770 - 2778 |
Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F-2+O-2 and Cl-2+O-2 high density plasmas
Vitale SA, Chae H, Sawin HH |
| 2779 - 2784 |
Codeposition on diamond film surface during reactive ion etching in SF6 and O-2 plasmas
Teii K, Hori M, Goto T |
| 2785 - 2790 |
Ion fluxes and energies in inductively coupled radio-frequency discharges containing C2F6 and c-C4F8
Goyette AN, Wang YC, Misakian M, Olthoff JK |
| 2791 - 2798 |
Angular dependence of SiO2 etching in a fluorocarbon plasma
Cho BO, Hwang SW, Lee GR, Moon SH |
| 2799 - 2805 |
Tantalum etching with a nonthermal atmospheric-pressure plasma
Tu VJ, Jeong JY, Schutze A, Babayan SE, Ding G, Selwyn GS, Hicks RF |
| 2806 - 2814 |
Control of the radio-frequency wave form at the chuck of an industrial oxide-each reactor
Berry L, Maynard H, Miller P, Moore T, Pendley M, Resta V, Sparks D, Yang QY |
| 2815 - 2821 |
New very high frequency plasma source using a TM01-mode patch antenna with short pins
Okumura T, Matsui T, Suzuki H, Sakiyama K |
| 2822 - 2826 |
Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium
Yun JY, Rhee SW, Park S, Lee JG |
| 2827 - 2834 |
Effect of hydrogen dilution on the structure of SiOF films prepared by remote plasma enhanced chemical vapor deposition from SiF4-based plasmas
Alonso JC, Pichardo E, Pankov V, Ortiz A |
| 2835 - 2842 |
Properties and the influences on plasma performance for the film produced by radio frequency boronization
Li J, Zhao YP, Gong XZ, Wan BN, Gu XM, Luo JR, Zhang SD, Li CF, Fang YC, Zhen M, Wang XM, Hu JS, Li SF, Xie JK, Wan YX |
| 2843 - 2846 |
Characterization of step coverage change in ultraviolet-transparent plasma enhanced chemical vapor deposition silicon nitride films
Bierner J, Jacob M, Schonherr H |
| 2847 - 2853 |
Epitaxial growth of GaN using reactive neutrals extracted from the nitrogen Helicon wave plasma
Kim KS, Kim SH |
| 2854 - 2857 |
Microstructure of Cu film sputter deposited on TiN
Furuya A, Ohshita Y, Ogura A |
| 2858 - 2863 |
An anomalous erosion of a rectangular magnetron system
Shidoji E, Nemoto M, Nomura T |
| 2864 - 2868 |
Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering
Kim KK, Song JH, Jung HJ, Choi WK, Park SJ, Song JH, Lee JY |
| 2869 - 2876 |
Optical and microstructural properties of MgF2UV coatings grown by ion beam sputtering process
Quesnel E, Dumas L, Jacob D, Peiro F |
| 2877 - 2883 |
Influence of Pt underlayer on the magnetic and magneto-optical properties of sputtered Co0.25Pt0.75 alloy films, and the static recording performance
Zou ZQ, Kim KW, Lee YP, Li M, Shen DF |
| 2884 - 2889 |
Residual stress formation in multilayered TiN/TaNx coatings during reactive magnetron sputter deposition
Nordin M, Larsson M, Joelsson T, Birch J, Hultman L |
| 2890 - 2896 |
Reactive pulsed magnetron sputtering process for alumina films
Kelly PJ, Henderson PS, Arnell RD, Roche GA, Carter D |
| 2897 - 2907 |
Ionization of sputtered material in a planar magnetron discharge
Christou C, Barber ZH |
| 2908 - 2913 |
Reactive deposition of compounds by a cavity-hollow cathode direct current sputtering system
Kazemeini MH, Berezin AA |
| 2914 - 2921 |
Microstructure and chemical state of Ti1-xYxN film deposited by reactive magnetron sputtering
Choi WS, Hwang SK, Lee CM |
| 2922 - 2927 |
Phase development in annealed zirconia-titania nanolaminates
DeLoach JD, Shibilski JJ, Crape CR, Aita CR |
| 2928 - 2931 |
Study of the double layer CeO2/Nb2O5 thin film
Zhang ZL, Du XH, Wang WD |
| 2932 - 2936 |
Titanium oxide films on Si(100) deposited by e-beam evaporation
Jang HK, Whangbo SW, Choi YK, Chung YD, Jeong K, Whang CN, Lee YS, Lee HS, Choi JY, Kim GH, Kim TK |
| 2937 - 2945 |
Monte Carlo modeling of electron beam physical vapor deposition of yttrium
Fan J, Boyd ID, Shelton C |
| 2946 - 2949 |
Depth distribution of Bi+ and Fe+ implanted into polyimide (C22H10N2O5)(n)
Wang KM, Hu H, Lu F, Chen F, Zhang JH, Liu XD, Liu JT, Wu B, Huang MB |
| 2950 - 2956 |
Near-surface chemistry in Zr2Fe and ZrVFe studied by means of x-ray photoemission spectroscopy: A temperature-dependent study
Kovac J, Sakho O, Manini P, Sancrotti M |
| 2957 - 2963 |
Dependence of optical properties on structural and compositional parameters in CuGaSe2
Diaz R, Martin T, Merino JM, Leon M, Rueda F |
| 2964 - 2971 |
Role of delocalized nitrogen in determining the local atomic arrangement and mechanical properties of amorphous carbon nitride thin films
Holloway BC, Kraft O, Shuh DK, Nix WD, Kelly M, Pianetta P, Hagstrom S |
| 2972 - 2977 |
Effect of Mg content in Cu(Mg)/SiO2/Si multilayers on the resistivity after annealing in an oxygen ambient
Lee W, Cho H, Cho B, Kim J, Kim YS, Jung WG, Kwon H, Lee J, Lee C, Reucroft PJ, Lee J |
| 2978 - 2985 |
Direct measurement of density-of-states effective mass and scattering parameter in transparent conducting oxides using second-order transport phenomena
Young DL, Coutts TJ, Kaydanov VI, Gilmore AS, Mulligan WP |
| 2986 - 2991 |
Electrical properties of thin gate dielectric grown by rapid thermal oxidation
Lee JS, Chang SJ, Sun SC, Jang SM, Yu MC |
| 2992 - 2996 |
In situ measurement of thickness dependent electrical resistance of ultrathin Co films on SiO2/Si(111) substrate
Li M, Zhao YP, Wang GC |
| 2997 - 3003 |
Study of chemical vapor deposition diamond film evolution from a nanodiamond precursor by C-13 isotopic labeling and ion implantation
Gouzman I, Richter V, Rotter S, Hoffman A |
| 3004 - 3007 |
Postdeposition annealing of pulsed laser deposited CNx films
Gonzalez P, Soto R, Lusquinos F, Leon B, Perez-Amor M |
| 3008 - 3011 |
Mass spectral investigation of the plasma phase of a pulsed plasma of acrylic acid
Haddow DB, Beck AJ, France RM, Fraser S, Whittle JD, Short RD |
| 3012 - 3013 |
Effects of BCl3 addition on Ar/Cl-2 gas in inductively coupled plasmas for lead zirconate titanate etching (vol 18, pg 1373, 2000)
An TH, Park JY, Yeom GY, Chang EG, Kim CI |
