L39 - L42 |
Fabrication of magnetic force microscopy probes via localized electrochemical deposition of cobalt Rolandi M, Okawa D, Backer SA, Zettl A, Frechet JMJ |
1547 - 1553 |
Interpretation of atomic friction experiments based on atomistic simulations Wyder U, Baratoff A, Meyer E, Kantorovich LN, David J, Maier S, Filleter T, Bennewitz R |
1554 - 1559 |
Effect of interface treatment with assisted ion beam on Mo-Si multilayer formation for mask blanks for extreme ultraviolet lithography Hiruma K, Miyagaki S, Yamaguchi A, Nishiyama I |
1560 - 1568 |
Electron emission characteristics of sol-gel (Ba0.67Sr0.33)TiO3 thin film coated silicon tips Gurbuz Y, Kang WP, Davidson JL, Tan OK, Zhu WG, Li Q, Xu JF |
1569 - 1573 |
Fabrication and characterization of a field emission display prototype for indoor giant display application Zhou TT, She JC, Chen J, Deng SZ, Xu NS |
1574 - 1580 |
Effects of phase of underlying W film on chemical vapor deposited-W film growth and applications to contact-plug and bit line processes for memory devices Kim SH, Kim JT, Kwak N, Kim J, Yoon TS, Sohn H |
1581 - 1583 |
Effect of MgO coating on field emission of a stand-alone carbon nanotube Pan L, Konishi Y, Tanaka H, Chakrabarti S, Hokushin S, Akita S, Nakayama Y |
1584 - 1587 |
Carbon nanotube tip melting with vacuum breakdown in cold cathode Verma P, Gautam S, Kumar P, Chaturvedi P, Rawat JS, Pal S, Chaubey R, Harsh, Vyas HP, Bhatnagar PK |
1588 - 1592 |
Lnfluence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions Faifer VN, Schroder DK, Current MI, Clarysse T, Timans PJ, Zangerle T, Vandervorst W, Wong TMH, Moussa A, Mccoy S, Gelpey J, Lerch W, Paul S, Bolze D, Halim J |
1593 - 1602 |
On the photoresist stripping and damage of ultralow k dielectric materials using remote H-2- and D-2-based discharges Stueber GJ, Oehrlein GS, Lazzeri P, Bersani M, Anderle M, Busch E, McGowan R |
1603 - 1608 |
Solutions to a proximity effect in high resolution electron beam induced deposition van Dorp WF, Lazar S, Hagen CW, Kruit P |
1609 - 1614 |
Optical improvement of photonic devices fabricated by Ga+ focused ion beam micromachining Tao HH, Ren C, Feng S, Liu YZ, Li ZY, Cheng BY, Zhang DZ, Jin AZ |
1615 - 1621 |
Bright-field transmission imaging of carbon nanofibers on bulk substrate using conventional scanning electron microscopy Suzuki M, Ngo Q, Kitsuki H, Gleason K, Ominami Y, Yang CY, Yamada T, Cassell AM, Li J |
1622 - 1625 |
Room temperature InGaSb quantum well microcylinder lasers at 2 mu m grown monolithically on a silicon substrate Yang T, Lu L, Shih MH, O'Brien JD, Balakrishnan G, Huffaker DL |
1626 - 1629 |
Optimized fabrication of silicon nanofocusing x-ray lenses using deep reactive ion etching Kurapova O, Lengeler B, Schroer CG, Kuechler M, Gessner T, van der Hart A |
1630 - 1634 |
Possibility of constructing microwave antenna with carbon nanotubes Zhu Q, Wu L, Sheng S, Mei ZC, Liu WF, Cai WL, Yao LZ |
1635 - 1639 |
Plasma treatment on plastic substrates for liquid-phase-deposited SiO2 Yeh CC, Lin YJ, Lin SK, Wang YH, Chung SF, Huang LM, Wen TC |
1640 - 1646 |
Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas Sungauer E, Pargon E, Mellhaoui X, Ramos R, Cunge G, Vallier L, Joubert O, Lill T |
1647 - 1657 |
Experimental and model-based study of the robustness of line-edge roughness metric extraction in the presence of noise Naulleau PP, Cain JP |
1658 - 1663 |
High performance GaAsSb/GaAs quantum well lasers Yu SQ, Ding D, Wang JB, Samal N, Jin X, Cao Y, Johnson SR, Zhang YH |
1664 - 1670 |
Temperature influence and hot electrons in field electron emission from composite layers deposited by air plasma spraying of powders and suspensions Znamirowski Z, Czarczynski W, Pawlowski L, Wojnakowski A |
1671 - 1678 |
Enhancement on forming complex three dimensional microstructures by a double-side multiple partial exposure method Chung J, Hsu W |
1679 - 1683 |
Preparation of ferrite-coated magnetic force microscopy cantilevers Kirsch M, Koblischka MR, Wei JD, Hartmann U |
1684 - 1693 |
Effects of pore morphology on the diffusive properties of a porous low-kappa dielectric Joseph EA, Sant SP, Goeckner MJ, Overzet LJ, Peng HG, Gidley DW, Kastenmeier BEE |
1694 - 1699 |
Ultrahigh vacuum scanning tunneling microscope manipulation of single gold nanoislands on MoS2 for constructing planar nanointerconnects Yang JS, Deng J, Chandrasekhar N, Joachim C |
1700 - 1705 |
Tribochemistry and material transfer for the ultrananocrystalline diamond-silicon nitride interface revealed by x-ray photoelectron emission spectromicroscopy Grierson DS, Sumant AV, Konicek AR, Abrecht M, Birrell J, Auciello O, Carlisle JA, Scharf TW, Dugger MT, Gilbert PUPA, Carpick RW |
1706 - 1710 |
Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors Holland M, Stanley CR, Reid W, Hill RJW, Moran DAJ, Thayne I, Paterson GW, Long AR |
1711 - 1720 |
Controlling pressure in microsystem packages by on-chip microdischarges between thin-film titanium electrodes Wright SA, Gianchandani YB |
1721 - 1728 |
Transport behavior of atomic layer deposition precursors through polymer masking layers: Influence on area selective atomic layer deposition Sinha A, Hess DW, Henderson CL |
1729 - 1736 |
Microcontact printing pattern as a mask for chemical etching: A scanning photoelectron microscopy study Wu YT, Liao JD, Weng CC, Chen CH, Wang MC, Zharnikov M |