Thin Solid Films

Thin Solid Films, Vol.320, No.1 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (24 articles)

1 - 9	Process technology and integration challenges for high performance interconnects Sandhu GS
10 - 14	Growth and properties of W-Si-N diffusion barriers deposited by chemical vapor deposition Fleming JG, Roherty-Osmun E, Smith PM, Custer JS, Kim YD, Kacsich T, Nicolet MA, Galewski CJ
15 - 19	MOCVD of TiN and/or Ti from new precursors Lee J, Kim J, Shin H
20 - 25	Thermal stability of Al/barrier/TiSix multilayer structures Lu JP, Hsu WY, Hong QZ, Dixit GA, Luttmer JD, Havemann RH, Chen PJ, Tsai HL, Magel LK
26 - 30	TiN barrier integrity and volcano formation in W-plug applications Parikh S, Akselrod L, Gardner J, Armstrong K, Parekh N
31 - 34	Structural change of TiN/Ti/SiO2 multilayers by N-2 annealing Hamamura H, Itoh H, Shimogaki Y, Aoyama J, Yoshimi T, Ueda J, Komiyama H
35 - 44	CVD Al PVD Al integration for advanced via and interconnect technology Beinglass I, Naik M
45 - 51	Electromigration failure model : its application to W plug and Al-filled vias Kawasaki H, Gall M, Jawarani D, Hernandez R, Capasso C
52 - 57	Integrated CVD-PVD Al plug processing for sub-half micron features Konecni A, Dixit G, Russell NM, Luttmer JD, Havemann RH
58 - 62	Integrated Al-plug process for 0.45 mu m contact/via at 420 degrees C Parikh S
63 - 66	Temperature dependence of the Al-fill processes for submicron-via structures Weber SJ, Iggulden RC, Schnabel RF, Weigand P, Restaino DD, Brodsky SB, Mehter EA, Clevenger LA
67 - 72	Nucleation and growth of CVD Al on different types of TiN Avinun M, Barel N, Kaplan WD, Eizenberg M, Naik M, Guo T, Chen LY, Mosely R, Littau K, Zhou S, Chen L
73 - 76	Integrated barrier/plug fill schemes for high aspect ratio Gb DRAM contact metallization Chen YP, Dixit GA, Lu JP, Hsu WY, Konecni AJ, Luttmer JD, Havemann RH
77 - 85	What limits the application of TEM in the semiconductor industry? Zhang H
86 - 94	Alcohol-assisted growth of copper CVD films Borgharkar NS, Griffin GL, James A, Maverick AW
95 - 102	The carrier gas and surface passivation effects on selectivity in chemical vapor deposition of copper films Kim S, Park JM, Choi DJ
103 - 109	Exploring CMP solutions to planarity challenges with tungsten plugs Mendonca J, Murella K, Kim I, Schlueter J, Karlsrud C
110 - 121	Self-aligned Ti and Co silicides for high performance sub-0.18 mu m CMOS technologies Kittl JA, Hong QZ
122 - 127	Effect of implantation oxide on the Ti- and Co-silicidation of narrow diffusion and poly-lines Lauwers A, Naem A, de Potter M, Maex K
128 - 133	Integrated tungsten polycide : analysis of interface composition Adachi JY, McIntosh BC, Badt DE
134 - 140	Improved TiN film as a diffusion barrier between copper and silicon Rha SK, Lee WJ, Lee SY, Hwang YS, Lee YJ, Kim DI, Kim DW, Chun SS, Park CO
141 - 146	Structural and chemical stability of Ta-Si-N thin film between Si and Cu Lee YJ, Suh BS, Rha SK, Park CO
147 - 150	The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers Lee HC, Vanhaelemeersch S
151 - 158	Experimental and numerical analysis of rapid reaction to initiate the radical chain reactions in WSix CVD Chae YK, Egashira Y, Shimogaki Y, Sugawara K, Komiyama H