1 - 4 |
Effect of substrate temperature in chloroaluminum phthalocyanine thin films deposition studied by scanning tunneling microscopy and tunneling spectroscopy Ohmori T, Masuda H, Shimura M, Kuroda J, Okumura T |
5 - 8 |
New gamma-In2Se3/TCO (SnO2 or ZnO) thin film rectifying heterojunction Marsillac S, Bernede JC |
9 - 12 |
Patterning of a polysiloxane precursor to silicate glasses by microcontact printing Marzolin C, Terfort A, Tien J, Whitesides GM |
13 - 16 |
Epitaxial growth of Cu(111) films on Si(110) by magnetron sputtering: orientation and twin growth Jiang H, Klemmer TJ, Barnard JA, Doyle WD, Payzant EA |
17 - 21 |
Experimental survey of different precursor/solvent pairs for the deposition of tin dioxide by pyrosol Smith A, Laurent JM, Smith DS, Bonnet JP |
22 - 28 |
Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size Garcia S, Martin JM, Martil I, Gonzalez-Diaz G |
29 - 34 |
Ultrasonic surface waves for studying the properties of thin films Kuchler R, Richter E |
35 - 39 |
Bias enhanced nucleation and bias textured growth of diamond on silicon(100) in hot filament chemical vapor deposition Huang JT, Yeh WY, Hwang J, Chang H |
40 - 43 |
FTIR reflection absorption spectroscopy for organic thin film on ITO substrate Tamada M, Koshikawa H, Hosoi F, Suwa T |
44 - 48 |
Quantitative analysis of growth process of carbon clusters C-n (n = 2,3,4) Yanagihara T, Yomogita K |
49 - 56 |
Growth of Ge layers on Si(100) monitored by in situ ellipsometry Larciprete R, Cozzi S, Masetti E, Montecchi M, Padeletti G |
57 - 61 |
Novel precursors for the growth of alpha-In2S3 : trisdialkyldithiocarbamates of indium O'Brien P, Otway DJ, Walsh JR |
62 - 65 |
Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films Akiyama M, Xu CN, Nonaka K, Shobu K, Watanabe T |
66 - 71 |
Use of Auger- and photoelectron lines in the identification of chemical states of novel ternary Ti-Al-O films prepared by reactive magnetron sputtering ion plating von Richthofen A, Cremer R, Domnick R, Neuschutz D |
72 - 76 |
Porous structure of silica films obtained by monosilane oxidation Dultsev FN, Nenasheva LA, Vasilyeva LL |
77 - 85 |
Effect of the annealing temperature on structural and piezoelectric properties of the sol-gel Pb(Zr0.56Ti0.44)(0.90)(Mg1/3Nb2/3)(0.10)O-3 films Sumi K, Qiu H, Kamei H, Moriya S, Murai M, Shimada M, Nishiwaki T, Takei K, Miyashita S, Hashimoto M |
86 - 93 |
Epitaxial growth with phosphorus - 3. Formation of indium phosphide thin films using cyclohexylphosphine, (C6H11)PH2, as the organophosphorus source compound Glass JA, Spencer JT |
94 - 98 |
Effects of temperature and ZnSe well-layer thickness on PL in ZnSe/ZnS strained-layer superlattices Hsu CT |
99 - 103 |
MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor Giani A, Boulouz A, Pascal-Delannoy F, Foucaran A, Boyer A |
104 - 110 |
Dependence of structural features on substrates in Co/Cu multilayers Li PQ, Shen HL, Saitoh Y, Fujimoto T, Kojima I |
111 - 117 |
Preparation of TiO2 films on self-assembled monolayers by sol-gel method Lin H, Kozuka H, Yoko T |
118 - 122 |
Sulfide films on PbSe thin layer grown by MBE Gautier C, Breton G, Nouaoura M, Cambon M, Charar S, Averous M |
123 - 126 |
Influence of reactive gas pressure on the deposition of an AlN protective film for organic photoconductor Miao XS, Chan YC, Pun EYB |
127 - 138 |
Orientation specific effects on Pd/H deposits. Electrochemical measurements and potential calculations Sittler F, Ramseyer C, Spielmann B, Girardet C, Pagetti J |
139 - 143 |
Correlation between the oxidation behavior and the microstructure of SiC coatings deposited on graphite substrates via chemical vapor deposition Kingetsu T, Takehara M, Yarii T, Ito K, Masumoto H |
144 - 152 |
Microstructure, adhesion, microhardness, abrasive wear resistance and electrical resistivity of the plasma sprayed alumina and alumina-titania coatings Ramachandran K, Selvarajan V, Ananthapadmanabhan PV, Sreekumar KP |
153 - 158 |
Tension and fatigue behavior of a PVD TiN-coated material Su YL, Yao SH, Wei CS, Wu CT |
159 - 169 |
Plasma-sprayed ZrO2 thermal barrier coatings doped with an appropriate amount of SiO2 Chen HC, Pfender E, Heberlein J |
170 - 178 |
Performance of 3C-SiC thin films as protective coatings for silicon-micromachined atomizers Rajan N, Zorman CA, Mehregany M, DeAnna R, Harvey R |
179 - 185 |
Gas and plasma nitriding pretreatments of steel substrates before CVD growth of hard refractory coatings Abisset S, Maury F, Feurer R, Ducarroir M, Nadal M, Andrieux M |
186 - 191 |
Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy Petrik P, Biro LP, Fried M, Lohner T, Berger R, Schneider C, Gyulai J, Ryssel H |
192 - 194 |
The effect of the vertical loan on the scraping test Xie ZW, Zhu J |
195 - 201 |
On the effects of stresses in ferroelectric (Pb,Ca)TiO3 thin films Mendiola J, Calzada ML, Ramos P, Martin MJ, Agullo-Rueda F |
202 - 206 |
Study on stress and strain of cubic boron nitride thin films Zhang XW, Yue JS, Chen GH, Yan H |
207 - 213 |
Analysis of the mechanical response of film on substrate systems presenting rough interfaces Bordet H, Ignat M, Dupeux M |
214 - 221 |
Measurement of fracture toughness of ultra-thin amorphous carbon films Li XD, Bhushan B |
222 - 228 |
Effect of annealing and hydrogen plasma treatment on the voltammetric and impedance behavior of the diamond electrode Ramesham R |
229 - 237 |
Carrier gas effects on the selectivity in chemical vapor deposition of copper Kim S, Park JM, Choi DJ |
238 - 243 |
Nb doped SrTiO3 thin films deposited by pulsed laser ablation Fukushima K, Shibagaki S |
244 - 250 |
Influence of molecular aggregation and orientation on the photoelectric properties of tetrasulfonated gallium phthalocyanine self-assembled on a microporous TiO2 electrode Deng HH, Mao HF, Lu ZH, Xu HJ |
251 - 256 |
Study on optical efficiency of alternating-current thin-film electroluminescent devices Ye YH, Zhang JY, Gu PF, Tang JF |
257 - 262 |
Electron microscopy analysis of the microstructure of Ti1-xAlxN alloy thin films prepared using a chemical vapour deposition method Ikeda S, Gilles S, Chenevier B |
263 - 265 |
Room temperature photoluminescence from erbium-doped silica thin films prepared by cosputtering Gu G, Du YW, Yu T |
266 - 272 |
Electrical properties of sol-gel-derived transparent titania films doped with ruthenium and tantalum Lin H, Kumon S, Kozuka H, Yoko T |
273 - 280 |
Efficiency of optical second harmonic generation from pentacene films of different morphology and structure Jentzsch T, Juepner HJ, Brzezinka KW, Lau A |
281 - 285 |
Influence of anodisation time, current density and electrolyte concentration on the photoconductivity spectra of porous silicon Mehra RM, Agarwal V, Jain VK, Mathur PC |
286 - 293 |
Scaling wafer stresses and thermal processes to large wafers Nilson RH, Griffiths SK |
294 - 300 |
Stability and superstructure of squarylium dye TSQ Langmuir-Blodgett films Zhong TX, Workman RK, Yao XW, Jabbour GE, Peterson CA, Sarid D, Dirk CW, de la Cruz D, Nagarur A |
301 - 304 |
Silver doping of thin CdS films by an ion exchange process Ristova M, Ristov M, Tosev P, Mitreski M |
305 - 309 |
Two-way shape memory effect of sputter-deposited thin films of Ti 51.3 at% Ni Sato M, Ishida A, Miyazaki S |
310 - 315 |
Influence of Cu overlayer on the properties of SnO2-based gas sensors Cirilli F, Kaciulis S, Mattogno G, Galdikas A, Mironas A, Senuliene D, Setkus A |
316 - 321 |
Optical characterization by spectroscopic ellipsometry of polycrystalline Si1-xGex of variable Ge composition up to 100% Ge Ferrieu F, Morin C, Regolini JL |
322 - 326 |
Fractal structure in the silver oxide thin film Hou SM, Ouyang M, Chen HF, Liu WM, Xue ZQ, Wu QD, Zhang HX, Gao HJ, Pang SJ |
327 - 335 |
Structural and physical properties of sprayed copper-zinc oxide films Nasser SA, Afify HH, El-Hakim SA, Zayed MK |
336 - 344 |
Oxidation behavior of CVD TiN-Ti5Si3 composite coatings Llauro G, Gourbilleau F, Sibieude F, Hillel R |
345 - 350 |
The strengthening mechanism of DLC film on silicon by MPECVD Sung SL, Guo XJ, Huang KP, Chen FR, Shih HC |