Journal of Crystal Growth

Journal of Crystal Growth, Vol.438 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (16 articles)

1 - 4	Ge dots formation using Si(100)-c( 4 x 4) surface reconstruction Satoh Y, Itoh Y, Kawashima T, Washio K
5 - 10	Growth mechanism evolvement influence on out-of -planetexture of Y2O3 seed layer for coated conductors Xia YD, Tao BW, Xiong J, Zhang X, Zhao Y
11 - 18	Crystal and multiple melting behaviors of PCL lamellae in ultrathin films Yu X, Wang N, Lv SS
19 - 24	Influence of film composition on the transition temperature of FeRh films Jiang M, Chen XZ, Zhou XJ, Wang YY, Pan F, Song C
25 - 30	Crystal growth and dynamic ferroelectric hysteresis scaling behavior of molecular ferroelectric diisopropylammonium bromide Jiang CL, Lin HC, Luo CH, Zhang YY, Yang J, Peng H, Duan CG
31 - 37	Synthesis of hollow spherical tin phosphides (Sn4P3) and their high adsorptive and electrochemical performance Liu SL, Zhang HZ, Xu LQ, Ma LB
38 - 42	Experimental study of cold plume instability in large Prandtl number Czochralski melt: Parametric dependences and scaling laws Miroshnichenko E, Kit E, Gelfgat AY
43 - 48	Surfactant antimony enhanced indium incorporation on InGaN (0001) surface: A DFT study Zhang YO, Zhu JY
49 - 54	Determination of composition and energy gaps of GaInNAsSb layers grown by MBE Aho A, Korpijarvi VM, Isoaho R, Malinen P, Tukiainen A, Honkanen M, Guina M
55 - 62	Experimental investigation on effects of crystal and crucible rotation on thermal convection in a model Czochralski configuration Shen T, Wu CM, Zhang L, Li YR
63 - 69	MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates Ludewig P, Reinhard S, Jandieri K, Wegele T, Beyer A, Tapfer L, Volz K, Stolz W
70 - 75	Growth and characterization of boron doped graphene by Hot Filament Chemical Vapor Deposition Technique (HFCVD) Jafari A, Ghoranneviss M, Elahi AS
76 - 80	Lifetime improvement of photovoltaic silicon crystals grown by Czochralski technique using "liquinert" quartz crucibles Fukuda T, Horioka Y, Suzuki N, Moriya M, Tanahashi K, Simayi S, Shirasawa K, Takato H
81 - 89	Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R, Sitar Z
90 - 98	Numerical study of liquid phase diffusion growth of SiGe subjected to accelerated crucible rotation Sekhon M, Lent B, Dost S
99 - 103	Static sublimation purification process and characterization of LiZnAs semiconductor material Montag BW, Reichenberger MA, Edwards NS, Ugorowski PB, Sunder M, Weeks J, McGregor DS