1 - 6 |
Formation of the spiral morphology of high melting point crystals pulled from the crucible Schwabe D |
7 - 12 |
Growth of SiC single crystals on patterned seeds by a sublimation method Yang XL, Chen XF, Peng Y, Xu XG, Hu XB |
13 - 18 |
Orientation-dependent impurity partitioning of colloidal crystals Nozawa J, Uda S, Hu SM, Fujiwara K, Koizumi H |
19 - 27 |
Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA) Sterzer E, Beyer A, Duschek L, Nattermann L, Ringler B, Leube B, Stegmuller A, Tonner R, von Hanisch C, Stolz W, Volz K |
28 - 32 |
Germanium-catalyzed growth of single-crystal GaN nanowires Saleem U, Wang H, Peyrot D, Olivier A, Zhang J, Coquet P, Ng SLG |
33 - 39 |
X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates Rodriguez JB, Madiomanana K, Cerutti L, Castellano A, Tournie E |
40 - 46 |
Evolution of grain structures during directional solidification of silicon wafers Lin HK, Wu MC, Chen CC, Lan CW |
47 - 53 |
Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates Maliakkal CB, Rahman AA, Hatui N, Chalke BA, Bapat RD, Bhattacharya A |
54 - 59 |
Rubrene polycrystalline films growth from vacuum deposition at various substrate temperatures Lin KY, Wang YJ, Chen KL, Yang CC, Ho CY, Lee KR, Shen JL, Chiu KC |
60 - 65 |
Controlling the compositional inhomogeneities in AlxGa1-xN/AlGa1-yN MQWs grown by PA-MBE: Effect on luminescence properties Pramanik P, Sen S, Singha C, Roy AS, Das A, Sen S, Bhattacharyya A, Kumar D, Rao DVS |
66 - 73 |
Effect of interdendritic thermoelectric magnetic convection on evolution of tertiary dendrite during directional solidification Zhong H, Li CJ, Ren ZM, Rettenmayr M, Zhong YB, Yu JB, Wang J |
74 - 79 |
Natural sedimentation of insoluble particles during directional solidification of upgraded metallurgical-grade silicon Gan CH, Xiong HP, Fang M, Qiu S, Xing PF, Luo XT |
80 - 86 |
Thermoelectric properties of Tl-doped PbTeSe crystals grown by directional solidification Su CH |
87 - 92 |
Mg incorporationinGaNgrownbyplasma- assistedmolecularbeam epitaxy athightemperatures Yang WC, Lee PY, Tseng HY, Lin CW, Tseng YT, Cheng KY |
93 - 98 |
Exploring growth conditions and Eu2+ concentration effects for KSr2I5:Eu scintillator crystals Stand L, Zhuravleva M, Camarda G, Lindsey A, Johnson J, Hobbs C, Melcher CL |
99 - 103 |
Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates Lu J, DiNezza MJ, Zhao XH, Liu S, Zhang YH, Kovacs A, Dunin-Borkowski RE, Smith DJ |
104 - 109 |
Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications Addamane SJ, Mansoori A, Renteria EJ, Dawson N, Shima DM, Rotter TJ, Hains CP, Dawson LR, Balakrishnan G |