Journal of Crystal Growth

Journal of Crystal Growth, Vol.476 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (15 articles)

1 - 5	Time lapse microscopy of temperature control during self-assembly of 3D DNA crystals Conn FW, Jong MA, Tan A, Tseng R, Park E, Ohayon YP, Sha RJ, Mao CD, Seeman NC
6 - 11	Epitaxial growth of barium titanate thin films on germanium via atomic layer deposition Lin EL, Posadas AB, Wu HW, Smith DJ, Demkov AA, Ekerdt JG
12 - 16	Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films Ohgaki T, Sakaguchi I, Ohashi N, Haneda H
17 - 24	Investigation on the shape evolution of Cu2O crystals in the antibacterial process Wang MF, Ni YH, Liu AM
25 - 30	Nanoscale zinc silicate from phytoliths Qadri SB, Gorzkowski EP, Rath BB, Feng CR, Amarasinghe R, Freitas JA, Culbertson JC, Wollmershauser JA
31 - 37	Hydrothermal synthesis and formation mechanism of single-crystal Auivillius Bi4Ti3O12 nanosheets with ammonium bismuth citrate (C6H10BiNO8) as Bi sources Sun XL, Xu G, Bai HW, Zhao YG, Tian H, Wang JW, Li X, Han GR
38 - 44	Effect of the melt superheat on equiaxed solidification of Al-20 wt% Cu alloy investigated by in situ synchrotron radiography Luo SF, Yang GY, Xiao L, Huang WX, Yuan QX, Jie WQ
45 - 49	Assessment of growth and spectral properties of Cr3+-doped La0.83Y0.29Sc2.88(BO3)(4) crystal Huang YS, Sun SJ, Lin ZB, Zhang LZ, Wang GF
50 - 57	Carrier mobility reduction and model in n-type compensated silicon Li S, Gao WX, Zheng SS, Cheng HR, Yang X, Cheng QJ, Chen C
58 - 63	AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range Tamariz S, Martin D, Grandjean N
64 - 68	Study on the effect of film formation process and deposition rate on the orientation of the CsI: Tl thin film Tan XC, Liu S, Xie YJ, Guo LN, Ma SJ, Wang TY, Liu Y, Zhong ZY
69 - 77	Half a century of progress in crystal growth of multifunctional borates RAl3(BO3)(4) (R = Y, Pr, Sm-Lu) Leonyuk NI
78 - 89	Instabilities in rapid solidification of multi-component alloys Altieri AL, Davis SH
90 - 98	Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls Hartmann J, Steib F, Zhou H, Ledig J, Nicolai L, Fundling S, Schimpke T, Avramescu A, Varghese T, Trampert A, Strassburg M, Lugauer HJ, Wehmann HH, Waag A
99 - 106	Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films Yamashita T, Hayashi S, Naijo T, Momose K, Osawa H, Senzaki J, Kojima K, Kato T, Okumura H