Journal of Crystal Growth

Journal of Crystal Growth, Vol.226, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (26 articles)

1 - 7	Defect generation in multi-stacked InAs quantum dot/GaAs structures Roh CH, Park YJ, Kim KM, Park YM, Kim EK, Shim KB
8 - 12	In situ visualization of interface dynamics during the double laser recrystallization of amorphous silicon thin films Lee M, Moon S, Grigoropoulos CP
13 - 18	Improvement in the quality of ZnSe epilayers grown on (001) GaAs by the low temperature growth of a thin ZnSe buffer layer Zhang XB, Ha KL, Hark SK
19 - 30	The impact of nitrogen on the defect aggregation in silicon von Ammon W, Holzl R, Virbulis J, Dornberger E, Schmolke R, Graf D
31 - 38	Effect of V/III ratio and PH3 annealing on InAs dots grown by MOVPE on InP(001) step-bunched surfaces Souliere V, Dumont H, Auvray L, Monteil Y
39 - 46	Surface morphology investigation of Si thin film grown by temperature modulation Si molecular-layer epitaxy Nishizawa J, Murai A, Oizumi T, Kurabayashi T, Kanamoto K, Yoshida T
47 - 51	Czochralski growth of heavily impurity doped crystals of GeSi alloys Yonenaga I
52 - 56	Properties of Mg doped GaAs grown by molecular beam epitaxy Kim JS, Bae IH, Leem JY, Noh SK, Lee JI, Kim JS, Kim SM, Son JS, Jeon M
57 - 61	Polarity dependence of hexagonal inclusions and cubic twins in GaN/GaAs(001) epilayers measured by conventional X-ray pole figure and grazing incident diffraction pole figure Qu B, Zheng XH, Wang YT, Lin SM, Yang H, Liang JW
62 - 66	Growth of nano-crystalline diamond by pulsed laser deposition in oxygen atmosphere Chen ZY, Zhao JP, Yano T, Ooie T, Yoneda M, Sakakibara J
67 - 72	Electrodeposition of p-WS2 thin film and characterisation Devadasan JJ, Sanjeeviraja C, Jayachandran M
73 - 78	A selective growth of III-nitride by MOCVD for a buried-ridge type structure Yang M, Cho M, Kim C, Yi J, Jeon J, Khym S, Kim M, Choi Y, Leem SJ, Lee YH
79 - 82	Growth of large PbWO4 single crystals by Czochralski method Yang C, Guo Y, Shi P, Chen G
83 - 87	Influence of a magnetic field on melt-growth process of YBa2Cu3Ox Awaji S, Watanabe K, Motokawa M
88 - 94	Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame Wolter SD, Prater JT, Sitar Z
95 - 100	Control of Nd and Cr concentrations in Nd,Cr : Gd3Ga5O12 single crystals grown by Czochralski method Keszei B, Paitz J, Vandlik J, Suveges A
101 - 106	Crystal growth by micro-pulling-down of Ca3Ga2Ge4O14 (CGG) type-Sr3Nb1-xGa3 (+) (5/3)xSi2O14 compounds Jung IH, Yoshikawa A, Lebbou K, Fukuda T, Auh KH
107 - 110	Melt growth of spessartine (Mn3Al2Si3O12) van Haren JLM, Woensdregt CF
111 - 116	Growth and electrical properties of Pb(Sc1/2Nb1/2)O-3-Pb(Mg1/3Nb2/3)O-3-PbTiO3 ternary single crystals by a modified Bridgman technique Guo YP, Xu HQ, Luo HS, Xu GS, Yin ZW
117 - 122	Effects of pre-anneal treatment on the optical characteristics of lead tungstate single crystal Kim DH, Yang HS, Chang KD, Park HY, Lee MB, Lee JH, Song YH, Cho YR, Lee SY
123 - 129	Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition Wang XQ, Yang SR, Wang JZ, Li MT, Jiang XY, Du GT, Liu X, Chang RPH
130 - 137	Single crystal growth of organic semiconductors using melted anthracene as a solvent: N,N'-dimethylperylene-3,4 : 9,10-bis(dicarboximide) and phthalocyanines Miyahara T, Shimizu M
138 - 147	Electrocrystallisation of metal catalysts: nucleation and growth of platinum on a titanium electrode Milchev A, Stoychev D, Lazarov V, Papoutsis A, Kokkinidis G
148 - 157	Crystallization mechanism of LiNiO2 synthesized by Pechini method Lin SP, Fung KZ, Hon YM, Hon MH
158 - 167	An examination of the solution phase and nucleation properties of sodium, potassium and rubidium dodecyl sulphates Smith LA, Roberts KJ, Machin D, McLeod G
168 - 174	Strain-energy-driven abnormal grain growth in copper films on silicon substrates Zhang JM, Xu KW, Ji V