Journal of Crystal Growth

Journal of Crystal Growth, Vol.213, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (28 articles)

1 - 9	Gallium nitride growth using diethyl gallium chloride as an alternative gallium source Zhang L, Gu SL, Kuech TF, Boleslawski MP
10 - 18	Temperature field simulation and correlation to the structural quality of semi-insulating GaAs crystals grown by the vapour pressure controlled Czochralski method (VCz) Frank C, Jacob K, Neubert M, Rudolph P, Fainberg J, Muller G
19 - 26	Improved heterointerface quality of V-shaped AlGaAs/GaAs quantum wires characterized by atomic force microscopy and micro-photoluminescence Wang XL, Voliotis V, Grousson R, Ogura M
27 - 32	Deposition and crystallization of amorphous GaN buffer layers on Si(111)substrates Chen P, Xie SY, Chen ZZ, Zhou YG, Shen B, Zhang R, Zheng YD, Zhu JM, Wang M, Wu XS, Jiang SS, Feng D
33 - 39	MBE growth of wurtzite GaN on LaAlO3 (100) substrate Lee JJ, Park YS, Yang CS, Kim HS, Kim KH, Kang KY, Kang TW, Park SH, Lee JY
40 - 50	Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions Hayakawa Y, Okano Y, Hirata A, Imaishi N, Kumagiri Y, Zhong X, Xie X, Yuan B, Wu F, Liu H, Yamaguchi T, Kumagawa M
51 - 56	Characterization of secondary phases formed during MOVPE growth of InSbBi mixed crystals Wagener MC, Botha JR, Leitch AWR
57 - 62	Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers Hwang DH, Lee BY, Yoo HD, Kwon OJ
63 - 69	Single-crystal growth of C70S8 - a new phase in the C-70-sulphur system Talyzin AV, Tergenius LE, Jansson U
70 - 74	A combined optical, SEM and STM study of growth spirals on the polytypic cadmium iodide crystals Singh R, Samanta SB, Narlikar AV, Trigunayat GC
75 - 78	Surfactant-moderated growth on a vicinal surface Harris S
79 - 82	Experimental confirmation of charged carbon clusters in the hot filament diamond reactor Jeon JD, Park CJ, Kim DY, Hwang NM
83 - 92	Deposition mechanism of gold by thermal evaporation: approach by charged cluster model Barnes MC, Kim DY, Ahn HS, Lee CO, Hwang NM
93 - 98	Ferric phosphate precipitation in aqueous media Pierri E, Tsamouras D, Dalas E
99 - 102	Directional solution growth of cylindrical alpha-NiSO4 center dot 6H(2)O crystal Su GB, He YP, Li ZD, Jiang RH, Zhu CW, Yang SF
103 - 111	Growth and investigation of new non-linear optical crystals of LAP family Petrosyan AM, Sukiasyan RP, Karapetyan HA, Terzyan SS, Feigelson RS
112 - 115	The electrolytic preparation and physical characterization of ZrTiO4 films Gheorghies C
116 - 128	The influence of impurities on crystallization kinetics - a case study on ammonium sulfate Rauls M, Bartosch K, Kind M, Kuch S, Lacmann R, Mersmann A
129 - 134	Multiply twinned particles beyond the icosahedron Nepijko SA, Hofmeister H, Sack-Kongehl H, Schlogl R
135 - 140	Ice configuration near a growing ice lens in a freezing porous medium consisting of micro glass particles Watanabe K, Mizoguchi M
141 - 149	Halo growth during unidirectional solidification of camphor-naphthalene eutectic system Suk MJ, Leonartz K
150 - 156	Determination of the three-dimensional crystallographic misorientation in heterostructures by selected area diffraction (SAD) in cross-sectional TEM Wen CY, Guo XJ, Huang JH, Shih HC
157 - 160	Pulsed deposition and postnucleation: model for the average cluster size as a function of the number of pulses Fuenzalida VM
161 - 187	Dendritic growth of randomly oriented nuclei in a shear flow Tonhardt R, Amberg G
188 - 192	A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate Wang T, Morishima Y, Naoi N, Sakai S
193 - 197	Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots Liu HY, Wang XD, Xu B, Ding D, Jiang WH, Wu J, Wang ZG
198 - 202	Blue emission and Raman scattering spectrum from AlN nanocrystalline powders Cao YG, Chen XL, Lan YC, Li JY, Xu YP, Xu T, Liu QL, Liang JK
203 - 206	Formation of diamond from supercritical H2O-CO2 fluid at high pressure and high temperature Kumar MDS, Akaishi M, Yamaoka S