1 - 5 |
Integration of colossal magnetoresistors with GaAs Khartsev SI, Kim JH, Grishin AM |
6 - 14 |
Correlation of magnetic properties with microstructural properties for columnar-structured (Zn1-xMnx)O/Al2O3 (0001) thin films Lee S, Kang TW, Kim DY |
15 - 19 |
Direct growth of high-quality CdTe epilayers on Si(211) substrates by metalorganic vapor-phase epitaxy Niraula M, Yasuda K, Ohnishi H, Eguchi K, Takahashi H, Noda K, Agata Y |
20 - 27 |
Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness Lei W, Chen YH, Wang YL, Xu B, Ye XL, Zeng YP, Wang ZG |
28 - 38 |
Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1-xAs van Deelen J, Bauhuis GJ, Schermer JJ, Larsen PK |
39 - 46 |
Evolution of structural and optical characteristics in InAs quantum dots capped by GaAs layers comparable to dot height Lee SJ, Kim JO, Noh SK, Choe JW, Lee KS |
47 - 56 |
Microsize defects in InGaAs/GaAs (N11)A/B multilayers quantum dot stacks Lytvyn PM, Prokopenko IV, Strelchuk VV, Mazur YI, Wang ZM, Salamo GJ |
57 - 64 |
Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition Usami N, Kitamura M, Obara K, Nose Y, Shishido T, Nakajima K |
65 - 72 |
Characteristics of sputter-deposited BaTiO3/SrTiO3 artificial superlattice films on an LaNiO3-coated SrTiO3 substrate Tsai HN, Liang YC, Lee HY |
73 - 79 |
Synthesis and characterization of In2O3/SnO2 hetero-junction beaded nanowires Wang JX, Chen HY, Gao Y, Liu DF, Song L, Zhang ZX, Zhao XW, Dou XY, Luo SD, Zhou WY, Wang G, Xie SS |
80 - 85 |
Non-catalytic synthesis of ZnO nanocolumns with different cross-sections Leung YH, Djurisic AB, Xie MH |
86 - 90 |
Floating zone growth of lithium iron (II) phosphate single crystals Chen DP, Maljuk A, Lin CT |
91 - 99 |
Promoted nitrogen dissolution due to the addition of Li or Ca to Ga-Na melt; some effects of additives on the growth of GaN single crystals using the sodium flux method Morishita M, Kawamura F, Kawahara M, Yoshimura M, Mori Y, Sasaki T |
100 - 107 |
Preparation, structure and ferroelectric properties of Ba(Fe0.5Nb0.5)O-3 powders by sol-gel method Chung CY, Chang YH, Chen GJ, Chai YL |
108 - 111 |
Growth and diode-pumped CW lasing of Nd : KLu(WO4)(2) Zhang JX, Wang JY, Zhang HJ, Xu FH, Wang ZP, Shao ZS, Zhao HY, Wang YP |
112 - 122 |
Growth kinetics study in halide chemical vapor deposition of SiC Nigam S, Chung HJ, Polyakov AY, Fanton MA, Weiland BE, Snyder DW, Skowronski M |
123 - 128 |
Glancing-incidence X-ray analysis of ZnO thin films and ZnO/ZnMgO hetero structures grown by laser-MBE Yang XD, Zhang JW, Bi Z, He YN, Xu Q, Wang HB, Zhang WF, Hou X |
129 - 135 |
Solvothermal synthesis of alpha-MnS single crystals Biswas S, Kar S, Chaudhuri S |
136 - 141 |
Properties of Na0.5Bi0.5TiO3 ferroelectric films prepared by chemical solution decomposition Yang CH, Wang Z, Li QX, Wang JH, Yang YG, Gu SL, Yang DM, Han JR |
142 - 148 |
Radial spherical ZnO structures with nanorods grown on both sides of a hollow sphere-like core Ding SL, Guo H, Yan XH, Lin TJ, Xuan K |
149 - 155 |
Threshold concentration of MgO in near-stoichiometric LiNbO3 crystals Peter A, Polgar K, Kovacs L, Lengyel K |
156 - 165 |
Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H-SiC exploiting real time spectroscopic ellipsometry Losurdo M, Bruno G, Kim TH, Choi SJ, Brown A, Moto A |
166 - 171 |
Optical characterization of ZnO whiskers grown without catalyst by hot wall epitaxy method Eom SH, Yu YM, Choi YD, Kim CS |
172 - 175 |
The preparation and photoluminescence of in situ self-assembly 1D PbS nanocrystals Ye SY, Ye Y, Ni YB, Wu ZC |
176 - 183 |
Deposition of gamma-FeOOH, Fe3O4 and Fe on Pd-catalyzed substrates Nakanishi T, Masuda Y, Koumoto K |
184 - 189 |
The effect of LaNiO3 bottom electrode thickness on ferroelectric and dielectric properties of (100) oriented PbZr0.53Ti0.47O3 films Wang GS, Remiens D, Soyer C, Dogheche E, Cattan E |
190 - 196 |
Dielectric and piezoelectric properties of highly (100)-oriented BaTiO3 thin film grown on a Pt/TiOx/SiO2/Si substrate using LaNiO3 as a buffer layer Guo YP, Suzuki K, Nishizawa K, Miki T, Kato K |
197 - 202 |
Investigation of thermal conductivity of GaN by molecular dynamics Kawamura T, Kangawa Y, Kakimoto K |
203 - 208 |
Growth of large size (110) benzophenone crystal using uniaxially solution-crystallization method of Sankaranarayanan-Ramasamy (SR) Sankaranarayanan K |
209 - 220 |
Para-sexiphenyl thin films on KCl(100) surfaces: Growth morphologies and their individual epitaxial order Haber T, Andreev A, Thierry A, Sitter H, Oehzelt M, Resel R |
221 - 225 |
Synthesis and shape evolution of alpha-Fe2O3 nanophase through two-step oriented aggregation in solvothermal system Zheng YH, Cheng Y, Wang YS, Bao F |
226 - 234 |
Template-mediated growth of Cu3SnS4 nanoshell tubes Hu HM, Liu ZP, Yang BJ, Chen XY, Qian YT |
235 - 253 |
Dynamics of partially faceted melt-crystal interfaces III: Three-dimensional computational approach and calculations Weinstein O, Brandon S |
254 - 261 |
Morphology-controlled BaWO4 powders via a template-free precipitation technique Wang XM, Xu HY, Wang H, Yan H |
262 - 269 |
Growth and optical properties of nanocrystalline Gd3Ga5O12 : Ln (Ln = Eu3+ ,Tb3+, Er3+) powders and thin films via Pechini sol-gel process Pang ML, Lin J |
270 - 274 |
Growth and threshold effect of Sc : Er : LiNbO3 crystals Zhen XH, Li Q, Wang L, Xu YH |
275 - 280 |
Growth mechanism of relaxor-PbTiO3 single crystals shown by morphology of crystalline grains in ceramics Pan JS, Zhang XW, Chen KP |
281 - 292 |
Three-dimensional phase field simulation for surface roughening of heteroepitaxial films with elastic anisotropy Ni Y, He LH, Soh AK |
293 - 296 |
Crystallization behavior of three-dimensional silica fiber reinforced silicon nitride composite Qi GJ, Zhang CR, Hu HF, Cao F, Wang SQ, Jiang YG, Li B |