Journal of Crystal Growth

Journal of Crystal Growth, Vol.250, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (41 articles)

V - V	Publisher's and editor's note [Anonymous]
VI - VI	Publisher's note [Anonymous]
285 - 289	Realization of quantum cascade laser operating at room temperature Li CM, Liu FQ, Jin P, Wang ZG
290 - 297	Growth of InAs on GaAs(100) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals Naoi H, Shaw DM, Naoi Y, Sakai S, Collins GJ
298 - 304	Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal-melt interface position for precise control of the growth temperature Azuma Y, Usami N, Ujihara T, Fujiwara K, Sazaki G, Murakami Y, Nakajima K
305 - 312	InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition Lu TC, Tsai JY, Chu JT, Chang YS, Wang SC
313 - 323	Studies of the facetting of the polished (100) face of CaF2 Deuster V, Schick M, Kayser T, Dabringhaus H, Klapper H, Wandelt K
324 - 330	The influence of the intensity of melt stirring on the radial impurity distribution in proustite single crystals grown by the Stockbarger method using ACRT Distanov VE, Kirdyashkin AG
331 - 338	Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs Youn CJ, Jeong TS, Han MS, Yang JW, Lim KY, Yu HW
339 - 344	The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well Bian LF, Jiang DS, Lu SL, Huang JS, Chang K, Li LH, Harmand JC
345 - 348	Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) Zheng XH, Wang YT, Feng ZH, Yang H, Chen H, Zhou JM, Liang JW
349 - 353	Characterization of polycrystalline GaN grown on silica glass substrates Park SE, Lim SM, Byungsung O
354 - 358	High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers Feng G, Shen XM, Zhu JJ, Zhang BS, Zhao DG, Wang YT, Yang H, Liang JW
359 - 363	Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals Yu XG, Yang DR, Ma XY, Li H, Shen YJ, Tian DX, Li LB, Que DL
364 - 369	Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy Dong HW, Zhao YW, Zeng YP, Jiao JH, Li JM, Lin LY
370 - 381	Reactions at the liquid silicon/silica glass interface Schnurre SM, Schmid-Fetzer R
382 - 392	Charge transfer in CdTe at 200 and 300 K Balamurugan K, Saravanan R, Asharamani K, Manimaran P, Mariyappan S, Srinivasan N, Ono Y, Isshiki M, Kajitani T
393 - 396	Crystal-growth of PbFCl by modified Bridgman method Chen JM, Shen DZ, Mao RH, Ren GH, Yin ZW
397 - 404	Floating zone growth of high-quality SrTiO3 single crystals Nabokin PI, Souptel D, Balbashov AM
405 - 408	Oriented growth of CdS nanoparticulate film with constant average particle size with thickness up to similar to 1 mu m Roy UN, Kukreja LM
409 - 417	Synthesis and characterization of a micro scale zinc oxide-PVA composite by ultrasound irradiation and the effect of composite on the crystal growth of zinc oxide Kumar RV, Elgamiel R, Koltypin Y, Norwig J, Gedanken A
418 - 422	Hydrothermal synthesis of MoS2 nanowires Li WJ, Shi EW, Ko JM, Chen ZZ, Ogino H, Fukuda T
423 - 430	Synthesis and characterization of volatile metal beta-diketonate chelates of M(DPM)(n) (M = Ce, Gd, Y, Zr, n=3,4) used as precursors for MOCVD Song HZ, Jiang YZ, Xia CR, Meng GY, Peng DK
431 - 436	Energy transfer and annealing behavior of luminescence in Dy3+-doped PbWO4 single crystal Huang YL, Feng XQ, Zhu WL, Man ZY
437 - 443	Effects of growth temperature on the properties of ZnO/GaAs prepared by metalorganic chemical vapor deposition Bang KH, Hwang DK, Lim SW, Myoung JM
444 - 449	Dynamic process of crystallization of Sb2Se3 from Sb50Se50 amorphous film Kurumada M, Suzuki H, Kimura Y, Saito Y, Kaito C
450 - 457	Characteristic crystal growth from amorphous WO3 film by vacuum heating Kimura Y, Kaito C
458 - 462	Thermal and laser properties of Yb : YAl3(BO3)(4) crystal Li J, Wang JY, Cheng XF, Hu XB, Burns PA, Dawes JM
463 - 470	Phase relations around langasite (La3Ga5SiO14) in the system La2O3-Ga2O3-SiO2 in air Wang SQ, Uda S
471 - 478	Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition Danielsson O, Forsberg U, Janzen E
479 - 485	Structure and thermal stability of MOCVD ZrO2 films on Si (100) Wu X, Landheer D, Graham MJ, Chen HW, Huang TY, Chao TS
486 - 498	The crystal growth and perfection of 2,4,6-trinitrotoluene Gallagher HG, Vrcelj RM, Sherwood JN
499 - 515	Induction time in crystallization of gas hydrates Kashchiev D, Firoozabadi A
516 - 524	Influence of polyvinylpyrrolidone on the precipitation of calcium carbonate and on the transformation of vaterite to calcite Wei H, Shen Q, Zhao Y, Wang DJ, Xu DF
525 - 537	Efficient adaptive phase field simulation of directional solidification of a binary alloy Lan CW, Chang YC
538 - 545	Growth morphology of perfect and twinned face-centered-cubic crystals by Monte Carlo simulation Lee JW, Hwang NM, Kim DY
546 - 557	Eutectic structures in the Ni-Co-Cr-Al system obtained by plasma spraying and by Bridgman growth Fritscher K
558 - 564	Molecular dynamics simulation of the crystallization of a liquid gold nanoparticle Shim JH, Lee SC, Lee BJ, Suh JY, Cho YW
565 - 582	Experimental and numerical investigation of buoyancy driven convection during PDAMNA thin film growth Antar BN, Paley MS, Witherow WK
583 - 587	Selective-area MOCVD growth for distributed feedback lasers integrated with vertically tapered self-aligned waveguide Qiu WB, Wang W, Dong J, Zhou F, Zhang JY
588 - 594	A study of growth and morphological features of TiOxNy thin films prepared by MOCVD Pradhan SK, Reucroft PJ