Journal of Crystal Growth

Journal of Crystal Growth, Vol.265, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (42 articles)

331 - 340	Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs) Rudolph P, Frank-Rotsch C, Juda U, Naumann M, Neubert M
341 - 350	A model for epitaxial lateral overgrowth of GaAs by liquid-phase electroepitaxy Liu YC, Zytkiewicz ZR, Dost S
351 - 356	Growth of high-quality A1N with low pit density on SiC substrates Nakajima A, Furukawa Y, Koga S, Yonezu H
357 - 366	Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP Campi R, Codato S, Soldani D
367 - 374	Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates Wixom RR, Rieth LW, Stringfellow GB
375 - 381	High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy Kato H, Sano M, Miyamoto K, Yao T
382 - 389	Surface carbonization of Si(111) by C2H2 and the subsequent SiC(111) epitaxial growth from SiH4 and C2H2 Hu MS, Hong LS
390 - 398	Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization Smith TP, McLean H, Smith DJ, Davis RF
399 - 409	Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification Liu LJ, Kakimoto K, Taishi T, Hoshikawa K
410 - 419	Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation Toikkanen L, Leinonen T, Tukiainen A, Viitala S, Pessa M
420 - 424	Effects of coordination agents on the morphology of CdS nanocrystallites synthesized by the hydrothermal method Nie QL, Yuan QL, Chen WX, Xu ZD
425 - 433	In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs (001) in molecular beam epitaxy Pristovsek M, Tsukamoto S
434 - 439	A study of Indium incorporation efficiency in InGaN grown by MOVPE Bosi M, Fornari R
440 - 452	An experimental and numerical effort to simulate the interface deflection of YAG Schwabe D, Sumathi RR, Wilke H
453 - 458	Vapor growth and characterization of Cr-doped CdS0.8Se0.2 single crystals Roy UN, Babalola OS, Cui Y, Groza M, Mounts T, Zavalin A, Morgan S, Burger A
459 - 465	Correlation of the structure and the luminescence properties of Eu3+-doped Gd2O3 oxide between fiber single crystal and the nano-size powders Louis C, Lebbou K, Flores-Gonzalez MA, Bazzi R, Hautefeuille B, Mercier B, Roux S, Perriat P, Olagnon C, Tillement O
466 - 470	Investigation of Mn-implanted n-type Ge Liu LF, Chen NF, Yin ZG, Yang F, Zhou JP, Zhang FQ
471 - 475	The evolution of defect emissions in oxygen-deficient and -surplus ZnO thin films: the implication of different growth modes Ong HC, Du GT
476 - 481	The mechanism and characteristics of ZnS-based phosphor powders Lu HY, Chu SY
482 - 486	A novel and simple growth route towards ultra-fine ZnO nanowires Chen Z, Shan ZW, Li SX, Liang CB, Mao SX
487 - 493	Float zone growth and spectroscopic characterization of Tm : GdVO4 single crystals Higuchi M, Kodaira K, Urata Y, Wada S, Machida H
494 - 504	The interface inversion process during the Czochralski growth of high melting point oxides Schwabe D, Sumathi RR, Wilke H
505 - 517	Numerical studies of wave pattern in an oxide melt in the Czochralski crystal growth Jing CJ, Tsukada T, Hozawa M, Shimamura K, Ichinose N, Shishido T
518 - 524	Growth and uniformity improvement of PbWO4 crystal with yttrium doping Mao RH, Chen JM, Shen DZ, Yin ZW
525 - 529	High-quality ZnSSeTe epitaxial layers grown by MBE Chen WR
530 - 536	Study of the traps at a mercury cadmium telluride-anodic oxide interface using a transient photoconductive decay technique Gopal V, Devi N, Pal R, Kumar V
537 - 540	Characterization of MgxZn1-xO thin films prepared by sol-gel dip coating Ji ZG, Song YL, Xiang Y, Liu K, Wang C, Ye ZZ
541 - 547	Fabrication of ZnCdSe quantum dots under Stranski-Krastanow mode Shan CX, Fan XW, Zhang JY, Zhang ZZ, Wang XH, Lu YM, Liu YC, Shen DZ, Lu SZ
548 - 552	Effect of the oxygen concentration on the properties of Gd2O3 thin films Li YL, Chen NF, Zhou JP, Song SL, Liu LF, Yin ZG, Cai CL
553 - 557	Study on the effects of volatiles on BBO crystal growth Xu ZJ
558 - 562	Characterization of nanocrystalline bismuth telluride (Bi2Te3) synthesized by a hydrothermal method Zhang HT, Luo XG, Wang CH, Xiong YM, Li SY, Chen XH
563 - 570	Growth kinetics of diamond film with bias enhanced nucleation and H-2/CH4/Ar mixture in a hot-filament chemical vapor deposition system Ansari SG, Anh TL, Seo HK, Sung KG, Mushtaq D, Shin HS
571 - 576	Single crystal growth and characterization of a layered transition metal pnictide oxide: Na2Ti2Sb2O Ozawa TC, Kauzlarich SM
577 - 581	Natural growth habit of bulk AlN crystals Epelbaum BM, Seitz C, Magerl A, Bickermann M, Winnacker A
582 - 591	Epitaxial growth of europium on (110)Nb and (0001)Y Soriano S, Dumesnil K, Dufour C, Pierre D
592 - 603	The effects of silica and sugar on the crystallographic and morphological properties of calcium oxalate Yu H, Sheikholeslami R, Doherty WOS
604 - 615	Nucleation and growth of crystalline ribbons in diastereomeric ephedrine-cyclic phosphoric acid systems Loh JSC, van Enckevort WJP, Vlieg E
616 - 618	Growth of large single crystals of the orthorhombic paracetamol Mikhailenko MA
619 - 626	Electron beam induced deposition of rhodium from the precursor [RhCl(PF3)(2)](2): morphology, structure and chemical composition Cicoira F, Leifer K, Hoffmann P, Utke I, Dwir B, Laub D, Buffat PA, Kapon E, Doppelt P
627 - 641	An improved cutting plan for removing laser amplifier slabs from Yb : S-FAP single crystals using residual stress measurement and finite element modeling DeWald AT, Rankin JE, Hill MR, Schaffers KI
642 - 649	High-resolution TEM study of the microstructure of Zr65Ni10CU7.5Al7.5Ag10 bulk metallic glass Liu L, Chan KC, Pang GKH
650 - 650	Near stoichiometric LiNbO3 single-crystal growth by metal strip heated zone melting technique (vol 263, pg 421, 2004) Ni DQ, Wang WY, Zhang DF, Wu X, Chen XL, Lu KQ