383 - 388 |
Growth of highly c-axis-oriented aluminum nitride thin films on molybdenum electrodes using aluminum nitride interlayers Kamohara T, Akiyama M, Ueno N, Nonaka K, Tateyama H |
389 - 392 |
Growth and characteristics of GaNxP1-x alloys by magnetron reactive sputtering on GaN Chen LC, Chen HN, Lin RM |
393 - 397 |
Magnetic and optical properties of Cr+-implanted GaN Wang JQ, Chen PP, Guo XG, Li ZF, Lu W |
398 - 403 |
AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier Chen WS, Chang SJ, Su YK, Wang RL, Kuo CH, Shei SC |
404 - 409 |
Carbon-doped GaAs and InGaAs grown by solid source molecular beam epitaxy and effect of III/V ratio on their properties Tan KH, Yoon SF, Zhang R, Sun ZZ |
410 - 414 |
Orientation dependence behavior of self-assembled (In,Ga)As quantum structures on GaAs surface Seydmohamadi S, Wang ZM, Salamo GJ |
415 - 421 |
Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots Lim JG, Park YJ, Park YM, Song JD, Choi WJ, Han IK, Cho WJ, Lee JI, Kim TW, Kim HS, Park CG |
422 - 432 |
Experimental study of the solid-liquid interface dynamics and chemical segregation in concentrated semiconductor alloy Bridgman growth Duhanian N, Duffar T, Marin C, Dieguez E, Garandet JP, Dantan P, Guiffant G |
433 - 439 |
Measurement of growth rate by thermal pulse technique and growth of homogeneous InxGa1-xSb bulk crystals Murakami N, Arafune K, Koyama T, Kumagawa M, Hayakawa Y |
440 - 447 |
Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy Cheah WK, Fan WJ, Yoon SF, Ng TK, Loke WK, Zhang DH, Mei T, Liu R, Wee ATS |
448 - 454 |
Growth characteristics of InP in bridged mask growth using organo-metallic vapor phase epitaxy Kim JS, Lee YH, Chang KJ |
455 - 459 |
Oxygen concentration in the Czochralski-grown crystals with cusp-magnetic field Sim BC, Lee IK, Kim KH, Lee HW |
460 - 466 |
Microstructure characterization of delta-Bi2O3 thin film under atmospheric pressure by means of halide CVD on c-sapphire Takeyama T, Takahashi N, Nakamura T, Itoh S |
467 - 473 |
Structural properties of directionally grown polycrystalline SiGe for solar cells Fujiwara K, Pan W, Usami N, Sawada K, Nomura A, Ujihara T, Shishido T, Nakajima K |
474 - 480 |
Influence of Sb and Y co-doping on properties of PbWO4 crystal Xie JJ, Yang PZ, Yuan H, Liao JY, Shen BF, Yin ZW, Cao DH, Gu M |
481 - 485 |
Optical evidences of ZnS0.78Te0.22 quantum dots formed in ZnTe matrix Bahng JH, Koo JY, Moon SJ, Lee KH, Choi JC, Jeong K, Park HL |
486 - 491 |
Structural and luminescent properties of ZnO epitaxial film grown on Si(111) substrate by atmospheric-pressure MOCVD Chen YF, Jiang FY, Wang L, Zheng CD, Dai JN, Pu Y, Fang WQ |
492 - 495 |
Growth of nonlinear optical calcium pyroniobate crystal Long XF, Han XM |
496 - 503 |
Growth of 6H-SIC crystals along the [011(-)5] direction Herro ZG, Epelbaum BM, Bickermann M, Seitz C, Magerl A, Winnacker A |
504 - 511 |
Zone-levelling Czochralski growth of MgO-doped near-stoichiometric lithium niobate single crystals Tsai CB, Hsia YT, Shih MD, Tai CY, Hsieh CK, Hsu WC, Lan CW |
512 - 520 |
Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique Al Asmar R, Juillaguet S, Ramonda M, Giani A, Combette P, Khoury A, Foucaran A |
521 - 527 |
Fabrication and characterization of monodisperse zinc sulfide hollow spheres by gamma-ray irradiation using PSMA spheres as templates Zhao YB, Chen TT, Zou JH, Shi WF |
528 - 533 |
Growth of LiYF4 single-crystalline fibres by micro-pulling-down technique Santo AME, Ranieri IM, Brito GES, Epelbaum BM, Morato SP, Vieira ND, Baldochi SL |
534 - 540 |
Growth and spectroscopic properties of Er : YAG crystalline fibers Cornacchia F, Alshourbagy M, Toncelli A, Tonelli M, Ogino H, Yoshikawa A, Fukuda T |
541 - 547 |
Crystallinity-damage recovery and optical property of As-implanted Zno crystals by post-implantation annealing Jeong TS, Han MS, Kim JH, Youn CJ, Ryu YR, White HW |
548 - 553 |
Studies on the one-step preparation of iron nanoparticles in solution Ni XM, Su XB, Zheng HG, Zhang DG, Yang DD, Zhao QB |
554 - 560 |
Development of a reusable protein seed crystal processed by chemical cross-linking Iimura Y, Yoshizaki I, Rong L, Adachi S, Yoda S, Komatsu H |
561 - 571 |
Single- and multi-hole baffles - a heat transfer and fluid flow control for hydrothermal growth Li HM, Evans EA, Wang GX |
572 - 579 |
Effects of PSMA additive on morphology of barite particles Yu JG, Liu SW, Cheng B |
580 - 588 |
Characterization of pure and substituted 0.955Pb(Zn1/3Nb2/3)O-3-0.045PbTiO(3) Kobor D, Lebrun L, Sebald G, Guyomar D |
589 - 597 |
Unaggregated silicon nanocrystals obtained by ball milling Svrcek V, Rehspringer JL, Gaffet E, Slaoui A, Muller JC |
598 - 605 |
Roughening transition of prism faces of ice crystals grown from melt under pressure Maruyama M |
606 - 616 |
Study of intercalation/deintercalation of NaxCoO2 single crystals Lin CT, Chen DP, Lemmens P, Zhang XN, Maljuk A, Zhang PX |
617 - 623 |
Effect of kink contamination on habit of two-dimensional crystal during growth with edge diffusion Balykov LN, Kitamura M, Maksimov IL |
624 - 638 |
Transient growth and interaction of equiaxed dendrites Steinbach I, Diepers HJ, Beckermann C |