B69 - B71 |
Observation of extended copper passivity in carbonate solutions and its future application in copper CMP Ein-Eli Y, Abelev E, Auinat M, Starosvetsky D |
B72 - B75 |
Pore morphology and self-organization effects during etching of n-type GaP(100) in bromide solutions Wloka J, Mueller K, Schmuki P |
D43 - D45 |
Synthesis of silicon nanocrystals in silicon-rich SiO2 by rapid CO2 laser annealing Lin CJ, Lin GR, Chueh YL, Chou LJ |
F59 - F62 |
Structurally and electrically uniform deposition of high-k TiO2 thin films on a Ru electrode in three-dimensional contact holes using atomic layer deposition Kim SK, Kim KM, Kwon OS, Lee SW, Jeon CB, Park WY, Hwang CS, Jeong J |
F63 - F66 |
Low leakage BiFeO3 thin films fabricated by chemical solution deposition Chung CF, Wu JM |
J35 - J37 |
Hydrogen permeation and chemical stability of cermet [Ni-Ba(Zr0.8-xCexY0.2)O-3] membranes Zuo CD, Lee TH, Song SJ, Chen L, Dorris SE, Balachandran U, Liu ML |
A619 - A621 |
Nanostructured lanthanum manganate composite cathode Wang WG, Liu YL, Barfod R, Schougaard SB, Gordes P, Ramousse S, Hendriksen PV, Mogensen M |
A622 - A626 |
Single-particle electrode aqueous microbatteries Palencsar A, Scherson DA |
A627 - A629 |
Capacitance enhancement of activated carbon fiber cloth electrodes in electrochemical capacitors with a mixed aqueous solution of H2SO4 and AgNO3 Tanahashi I |
A630 - A632 |
Electrochemically deposited polyaniline nanowire's network - A high-performance electrode material for redox supercapacitor Gupta V, Miura N |
A633 - A636 |
Effects of neodymium oxide on electrochemical properties of V2O5 cathodes for Li/V2O5 secondary batteries Zhang Y, Hu XG, Liu YW, Cheng YS |
A637 - A640 |
Effects of cr contents on the physical and electrochemical properties of LiNi0.5-xCr2xMn0.5-xO2 cathode materials for lithium-ion batteries Sun YC, Xia YG, Noguchi H |
A641 - A645 |
Expanding the rate capabilities of the LiNi0.5Mn1.5O4 spinel by exploiting the synergistic effect between nano and microparticles Arrebola JC, Caballero A, Hernan L, Morales J |
A646 - A649 |
Process parameters of A-V2O5 prepared by melt-quenching method Zhang Y, Hu XG, Liu YW, Gu QP, Cheng YS |
A650 - A653 |
A novel anode material LiVMoO6 for rechargeable lithium-ion batteries Liu RS, Wang CY, Drozd VA, Hu SF, Sheu HS |
C185 - C188 |
Assembled GaN : Mg inverted hexagonal pyramids formed through a photoelectrochemical wet-etching process Lin CF, Dai JJ, Yang ZJ, Zheng JH, Chang SY |
C189 - C192 |
Controlled etching of InGaAlAs and GaAsSb using citric acid/hydrogen peroxide mixtures - High selectivity and good surface roughness Lijadi M, David C, Pelouard JL |
C193 - C195 |
Helical nanoholes bored in silicon by wet chemical etching using platinum nanoparticles as catalyst Tsujino K, Matsumura M |
G327 - G329 |
Improvement in light-output power of InGaN/GaN LED by formation of nanosize cavities on p-GaN surface Kang EJ, Huh C, Lee SH, Jung JJ, Lee SJ, Park SJ |
G330 - G332 |
Low-temperature silicon wafer-scale thermocompression bonding using electroplated gold layers in hermetic packaging Park GS, Kim YK, Paek KK, Kim JS, Lee JH, Ju BK |
G333 - G336 |
Metal wet etch process development for dual metal gate CMOS Hussain MM, Moumen N, Barnett J, Saulters J, Baker D, Zhang ZB |
G337 - G340 |
High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates Gao F, Balakumar S, Balasubramanian N, Lee SJ, Tung CH, Kumar R, Sudhiranjan T, Foo YL, Kwong DL |
G341 - G344 |
Enhancing the ambient-enduring performance of pentacene thin-film transistors by SnO2-encapsulation Kim WJ, Koo WH, Jo SJ, Kim CS, Baik HK, Lee J, Im S |
G345 - G347 |
The effect of thermally induced stress on device temperature measurements by Raman spectroscopy Kim J, Freitas JA, Klein PB, Jang S, Ren F, Pearton SJ |
G348 - G351 |
Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 angstrom oxynitride gate dielectric Pan TM, Liu CH |
G352 - G354 |
Annealing effects on AlGaN/GaN HEMTs employing excimer laser pulses Ha MW, Lee SC, Her JC, Seo KS, Han MK |
G355 - G358 |
Electrical properties of poly-Si/ALD Hf-silicate gate stacks with various controlled Hf/(Hf plus Si) composition ratios fabricated using Hf[N(CH3) (C2H5](4) and SiH[N(CH3)(2)](3) precursors Kamiyama S, Miura T, Nara Y |
G359 - G361 |
Diffusion-controlled selective wet etching of ZnCdO over ZnO Chen JJ, Ren F, Norton DP, Pearton SJ, Osinsky A, Dong JW, Chu SNG |
G362 - G366 |
Microelectronics thin film handling and transfer using low-temperature wafer bonding Tan CS, Reif R |
G367 - G370 |
Ultrathin HfO2 films treated by xenon flash lamp annealing for use as transistor gate dielectric replacements Kamiyama S, Miura T, Nara Y |
G371 - G375 |
Unassisted water splitting from bipolar Pt/dye-sensitized TiO2 photoelectrode arrays Park JH, Bard AJ |
H103 - H105 |
Magnetic field shape effect on electrical properties of TOLEDs in the deposition of ITO top cathode layer Kim HK, Lee KS, Keum MJ, Kim KH |