Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.10, No.6 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (30 articles)

C47 - C50	Study of initial oxidation of engineering alloys by high-temperature cyclic voltammetry Oijerholm J, Fafilek G, Pan J
D55 - D59	Pattern density effect on the bottom-up fill during damascene copper electrodeposition - Analysis of the suppressor concentration field effect Akolkar R, Dubin V
D60 - D62	Low-temperature preparation of metallic ruthenium films by MOCVD using bis(2,4-dimethylpentadienyl)ruthenium Kawano K, Kosuge H, Oshima N, Funakubo H
D63 - D66	Photochemical deposition of Ni-Cu patterns onto conducting substrates employing TiO2-Pd2+ layers Byk TV, Sokolov VG, Gaevskaya TV, Sviridov DV, Noh CH, Song KY, Cho SH
D67 - D71	Physical incorporation of saccharin molecules into electrodeposited soft high magnetic moment CoFe alloys Brankovic SR, Haislmaier R, Vasiljevic N
E11 - E13	Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowires - Growth and the effects of surface oxidation of Al seeding layer Whang SJ, Lee SJ, Yang WF, Cho BJ, Liew YF, Kwong DL
E14 - E15	In situ measurement of internal stress in electrolessly deposited copper film by television holographic interferometry Fukumuro N, Yamazaki M, Ito K, Ishihara H, Kakunai S, Yae S, Matsuda H
F23 - F25	Acceleration of redox diffusion and charge-transfer rates in an ionic liquid with nanoparticle addition Katakabe T, Kawano R, Watanabe M
G33 - G35	Advanced nanoanalysis of a Hf-based high-k dielectric stack prior to activation MacKenzie M, Craven AJ, McComb DW, De Gendt S, Docherty FT, McGilvery CM, McFadzean S
G36 - G38	Investigation of charge neutralization behavior in Cu/6FDA-PPD/Si MIS capacitors by capacitance-voltage measurement Yang CY, Chen JS, Hsu SLC
G39 - G41	Electric and magnetic properties of La- and Pr-modified BiFeO3 ceramics Liu YP, Wu JM
J71 - J74	Luminescence properties of metastable phased LaVO4/Eu3+ under UV and VUV light region Wang YH, Zuo YY, Gao H
J75 - J78	High-performance flexible organic light-emitting diodes using amorphous indium zinc oxide anode Kang JW, Jeong WI, Kim JJ, Kim HK, Kim DG, Lee GH
P15 - P17	Microstructural evolution of annealed ruthenium-nitrogen films Damayanti M, Sritharan T, Mhaisalkar SG, Engelmann HJ, Zschech E, Vairagar AV, Chan L
A139 - A141	Proton batteries with hydroponics gel as gel polymer electrolyte Yap SC, Mohamad AA
A142 - A145	Electrochemical dilatometry study on Si-embedded carbon nanotube powder electrodes Park S, Kim T, Oh SM
A146 - A150	Electrochemical reactivity of heterogeneous nanocomposite Li2Se-Cu3Se2 Yu L, Fu ZW
A151 - A154	Effect of Al3+ and F- doping on the irreversible oxygen loss from layered Li[Li0.17Mn0.58Ni0.25]O-2 cathodes Wu Y, Manthiram A
H161 - H164	Effect of fluorine ion/neutral-beam irradiation on ohmic contact formation to n-type GaN Lee HC, Bae JW, Park BJ, Jang JH, Yeom GY
H165 - H167	Performance improvement and mechanism of chlorine-treated InGaN-GaN light-emitting diodes Chen PS, Lee CS, Yan JT, Lee CT
H168 - H170	HPHA effect on reversible resistive switching of Pt/Nb-doped SrTiO3 Schottky junction for nonvolatile memory application Seong DJ, Jo M, Lee D, Hwang H
H171 - H174	High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes Yu CL, Chang PC, Chang SJ, Wu SL
H175 - H177	Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes Chang SJ, Shen CF, Chen WS, Ko TK, Kuo CT, Yu KH, Shei SC, Chiou YZ
H178 - H180	Reaction-limited wet etching of CuCrO2 Lim WT, Sadik PW, Norton DP, Pearton SJ, Wang YL, Ren F
H181 - H183	Temperature dependent photoluminescence of self-organized InAs quantum dots on an InGaAs strain buffer layer grown by MOCVD Huang KF, Lee FM, Hu CW, Peng TC, Wu MC, Lin CC
H184 - H185	Effect of oxide on trench edge defect formation in ion-implanted silicon Burbure N, Rudawski NG, Jones KS
H186 - H188	Efficient hole-injection in highly transparent organic thin-film transistors Chen FC, Lin YS, Chen TH, Kung LJ
H189 - H192	Utilizing gallium arsenide sacrificial films to inhibit surface roughening during the thermal desorption of gallium arsenide Pun AF, Zheng JP
H193 - H195	Copper hillock induced copper diffusion and corrosion behavior in a dual damascene process Kim S, Shim C, Hong JH, Lee H, Han J, Kim K, Kim Y
H196 - H198	GaN ultraviolet photodetector with a low-temperature AlN cap layer Chang SJ, Yu CL, Chang PC, Lin YC