Influences of growth temperature on low-temperature (60-400 degrees C) molecular beam epitaxy of the ferromagnetic silicide Fe(3)Si layer on Ge substrates were investigated. X-ray diffraction and reflective high-energy electron diffraction measurements suggested that Fe(3)Si layers were epitaxially grown on Ge at a temperature between 60 and 300 degrees C, while another phase layer was epitaxially grown at 400 degrees C. Rutherford backscattering spectroscopy measurements revealed that Ge atoms began to diffuse into the Fe(3)Si layers above 300 degrees C, and the FeSiGe layer was formed at 400 degrees C. As a result, very low value (4.0%) of the minimum scattering yield (X in) of the Fe(3)Si layers was obtained at 130 degrees C. Transmission electron microscopy measurements indicated that the interface of Fe(3)Si and Ge was atomically flat. In addition, analysis of the electron diffraction patterns of epitaxial Fe(3)Si layers confirmed the formation of DO3-type Fe(3)Si. (C) 2008 Elsevier B.V. All rights reserved.