This work reports on the performance and stability of bottom-gate In(2)O(3)-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In(2)O(3) channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm(2)/V-s, along with an ON/OFF current ratio of 10(9), and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications. (C) 2009 Elsevier B.V. All rights reserved.