화학공학소재연구정보센터
Journal of the Korean Industrial and Engineering Chemistry, Vol.1, No.2, 161-167, December, 1990
Poly(methylpheny)Silane Photoresist의 특성
Characteristics of Poly(methylphenyl)silane Photoreists
초록
Methylphenyldichlorosilane을 중합시켜 poly(methylphenyl)silane(PMPS)을 합성하고 이를 photoresist로 이용하는데 있어서 화상형상특성을 설명하기 위하여 노광에 의한 광학계수 X, Y, Z를 측정하였다. 광학계수 X, Y, Z는 PMPS 필름에 광조사를 시킨 다음 투과도를 측정하여 구하였으며, 계수Z는 광조사 시간에 따른 투과도의 초기 기울기로 부터 구하였다. 이들 계수로 부터 PMPS에 각종 증감제를 첨가하여 제조한 필름에 광조사를 시켜 광조사특성을 이론적으로 구하고 이를 잔막수득율을 측정한 결과 Z치와 잔막수득율은 parallel한 관계가 있었다.
Polymethylphenylsilane(PMPS) was synthesized with methylphenyldichlorosilane using metal sodium. Various sample coated on quartz plate were exposed and the yield of residual film was calculated. To obtain the fine image forming after developing and drying, optical transmittance characterization have to be considered. Exposure is described by three optical parameters X, Y, and Z. There parameters are normally determined from optical transmittance measurements of exposed PMPS films. Z parameter was determined from the initial slope of a transmittance according to exposure time. This set of function parameters provided a complete description of photoresist exposure and development and became the basis for the theoretical process models.
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