The Au/Anthracene/n-Si/Al MIS device was fabricated on the basis of anthracene film covalently bonded to a Si substrate. The MIS device showed Schottky behavior with barrier heights of 0.85 eV and ideality factors of 1.88 at 300 K. The barrier height of the Au/n-Si has increased after deposition of the anthracene layer onto Si. Temperature dependent current voltage (I V) measurements were performed on the Au/Anthracene/n-Si/A1 MIS diodes in the range 140-300 K. From the temperature dependence of forward bias the barrier height was observed to increase with temperature. However, the ideality factor decreased with increasing temperature. The values of activation energy (Ea) and Richardson constant (A*) were determined as 0.24 eV and 7.57 x 10(-6) A cm(-2) K-2 from the slope and the intercept at ordinate of the linear region of Richardson plot, respectively. The increase of the series resistance R, with the fall of temperature was attributed to lack of free carrier concentration at low temperatures. (C) 2013 Elsevier B.V. All rights reserved.