We used the magnetic circular dichroism of the absorption (MCDA) and MCDA-detected electron paramagnetic resonance (MCDA-EPR) to study a radiation-induced point defect in neutron-irradiated and subsequently annealed 6H-silicon carbide. We found MCDA-lines at photon energies in the 1.0-1.1 eV range to be associated with EPR spectra for spin S=1 with positive fine structure constants around 400.10(-4)cm(-1). The analysis of the hyperfine (HF) structure indicates that the defect measured is the excited spin triplet state of the neutral C(Si)-V(C) antisite-vacancy-pair at the three inequivalent lattice sites, which is a possible annealing product of the isolated silicon vacancy.