The intrinsic defects generated by electron irradiation at energies of the silicon deplacement threshold in p-type and n-type 6H-SiC have been investigated by electron paramagnetic resonance spectroscopy. In p-type Al doped 6H-SiC two main intrinsic defects have been observed. They were attributed to Si-Frenkel pairs V(Si)(-) - Si and carbon monovacancies V(C)(+). In n-type material a different defect with spin Hamiltonian parameters electron spin S=1/2 and an axial g-tensor (g//c=2.0026, g perpendicular toc=2.0029) is observed. This spectrum is characterized by an unusual superhyperfine interaction with 6 equivalent Si and (3+1) equivalent carbon neighbours of equal magnitude. The C SHF interaction could only be determined by the use of (13)C enriched samples. As a tentative model for this defect the V(Si)(3-) - Si pair center is proposed