This paper reports design, fabrication and characterization of 4H-SiC power BJTs in an all-SiC inductively loaded half-bridge inverter. DC characteristics and switching waveforms of SiC BJTs are reported. Power losses for both SiC BJT turn-on and turn-off are compared with Si IGBT power losses in an otherwise identical all-Si half-bridge inverter at room temperature and at 150degreesC.