Epi-base, implanted-emitter, npn bipolar transistors were fabricated with different emitter implantation species and annealing cycles, but with the same dose of 3 x 10(15)cm(-2). The best performance comes from Sample C (Phosphorus, 1600degreesC anneal) which shows a blocking voltage of 500V and maximum common emitter current gain (beta) of 8. Comparing to the previous results (60V blocking and beta of 40), the blocking voltage is greatly improved with reduced current gain due to the decrease of base transport factor. The samples also show negative temperature coefficient of beta, similar to the previous samples, easing device-paralleling problems.