Tetraethylsilane (TES, Si(C(2)H(5))(4)) was used as a safety source for the growth of SiC thin films on Si(III) substrates by chemical vapor deposition method. Carbonization of Si substrate was carried out to form a buffer layer using C(3)H(8) gas. SiC thin films were grown at various substrate temperatures and TES flow rates for the purpose of forming carbon-free SiC films. The excess carbon incorporated in the film due to high C/Si ratio was removed by means of decreasing the TES flow rate. Moreover, high quality SiC films were grown at high growth temperature of 1350degreesC.