The most important problem in a 4H-SiC vertical MOSFET is the high on-resistance caused by low channel mobility. This study focuses on a novel device structure named double-epitaxial MOSFET (DEMOSFET). In this device, the p-well is composed of two p-type epitaxial layers, while n-type region, between the p-wells, is formed by low dose n-type ion implantation. Buried channel is formed in the low concentration upper p-type layer. The high acceptor concentration of the bottom p-type layer and the low dose implanted n-type region supports the high breakdown voltage. The fabricated DEMOSFET exhibits an on-resistance of 36 mOmegacm(2) at gate voltage of 20 V and a blocking voltage of 1150 V. The on-resistance has positive temperature dependence at gate voltage higher than 15V.