습식 식각에 의한 실리콘 웨이퍼의 표면 및 전기적 특성변화(1)  - 불산 농도에 따른 표면형상 변화 -

김준우; 강동수; 이현용; 이상현; 고성우; 노재승; Jun-Woo Kim; Dong-Su Kang; Hyun-Yong Lee; Sang-Hyeon Lee; Seong-Woo Ko; Jae-Seung Roh

Korean Journal of Materials Research, Vol.23, No.6, 316-321, June, 2013

DOI10.3740/MRSK.2013.23.6.316 Export Citation

습식 식각에 의한 실리콘 웨이퍼의 표면 및 전기적 특성변화(1) - 불산 농도에 따른 표면형상 변화 -

Change of Surface and Electrical Characteristics of Silicon Wafer by Wet Etching(1) - Surface Morphology Changes as a Function of HF Concentration -

김준우, 강동수, 이현용, 이상현¹, 고성우¹, 노재승 ^†

금오공과대학교 신소재시스템공학부
¹㈜eCONY

Jun-Woo Kim, Dong-Su Kang, Hyun-Yong Lee, Sang-Hyeon Lee¹, Seong-Woo Ko¹, and Jae-Seung Roh^†

Kumoh National Institute of Technology, Gumi-Si, Gyeongbuk 730-701, Korea
¹eCONY, 170-4 Simi-Dong Gumi-Si Gyeongbuk 730-340, Korea

E-mail:

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM (80o tilted at × 200) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 μm/min was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 ohm·cm at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

Keywords:Si-wafer;etching;surface morphology

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[Related Articles]

[1] Petersen KE, IEEE. 70(5), 239-248 (1988). (1988)

[2] Middelhoek S, Hoogerwerf AC, Sensor and Actuators, 8, 39 (1985)

[3] Tenshoff HK, Hartmann M, Klein M, p. 168-171, Manfrad M, Kunzmann H, Aachen, Germany. (1994)

[4] Lundt H, Huber A, Hahn PO, 7th ed., p. 218-224, Huff HR, bergholz W, Sumino K, Processing of the 7th International Symposium on silicon Materials Science and Technology. Germany (1994). (1994)

[5] Schwartz B, Robbins H, J. Electrochem. Soc, 123(12), 1903 (1976)

[6] Knotter MD, J Am Chem Soc., 122, 4345 (2000)

[7] Jun M, Jo SK, J. Phys. Chem., 155, 23463 (2011)

[8] Schwartz B, Robbins H, J. Electrochem. Soc, 106(6), 505 (1959)

[9] Schwartz B, Robbins H, J. Electrochem. Soc, 107(2), 108 (1960)

[10] Schwartz B, Robbins H, J. Electrochem. Soc, 108(4), 365 (1961)

[11] Chartier C, Bastide S, Levy-Clement C, Electrochim. Acta, 53(17), 5509 (2008)

[12] Dennis H, 2nd., p. 554-560, Karen A., Werner Kern, William Andrew, Norwich NY USA (2008). (2008)

[13] Wet-Chemical Etching of Silicon, Microchemicals GmbH Home Page.www.microchemicals.eu/technical_information.

[14] Jang EJ, Hyun SM, Choi DG, Park YB, Lee HJ, KSME, 7, 51 (5007)

[15] Kang JH, Yu KM, Koo KW, Han SO, KIEE, 60(7) (2011)