습식 식각에 의한 실리콘 웨이퍼의 표면 및 전기적 특성변화(2) - 표면거칠기와 전기적 특성의 상관관계 -

김준우; 강동수; 이현용; 이상현; 고성우; 노재승; Jun-Woo Kim; Dong-Su Kang; Hyun-Yong Lee; Sang-Hyeon Lee; Seong-Woo Ko; Jae-Seung Roh

Korean Journal of Materials Research, Vol.23, No.6, 322-328, June, 2013

DOI10.3740/MRSK.2013.23.6.322 Export Citation

습식 식각에 의한 실리콘 웨이퍼의 표면 및 전기적 특성변화(2) - 표면거칠기와 전기적 특성의 상관관계 -

Change of Surface and Electrical Characteristics of Silicon Wafer by Wet Etching(2) - Relationship between Surface Roughness and Electrical Properties -

김준우, 강동수, 이현용, 이상현¹, 고성우¹, 노재승 ^†

금오공과대학교 신소재시스템공학부
¹㈜eCONY

Jun-Woo Kim, Dong-Su Kang, Hyun-Yong Lee, Sang-Hyeon Lee¹, Seong-Woo Ko¹, and Jae-Seung Roh^†

Kumoh National Institute of Technology, Gumi-Si, Gyeongbuk 730-701, Korea
¹eCONY, 170-4 Simi-Dong Gumi-Si Gyeongbuk 730-340, Korea

E-mail:

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10 × 10, 40 × 40, and 1000 × 1000 μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10 × 10 μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40 × 40 μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.

Keywords:surface roughness;resistivity;Si-wafer;etching

[References]

Schwartz B, Robbins H, J. Electrochem. Soc, 123(12), 1903 (1976)
Kim CS, Park MW, KSPE, 27(4), 40 (2010)
Kim SO, Lee SH, Kwak JS, KSME, 35(4), 401 (2011)
Zuecoa J, Alhamab F, J. Quan Spectro & Rad Tran, 101, 73 (2006)
Bellayer S, Gilman JW, Rahatekar SS, Bourbigot S, Flambard X, Hanssen LM, Guo H, Kumar S, Carbon, 45(12), 2417 (2007)
Seo SK, Roh JS, Kim ES, Chi SH, Kim SH, Lee SW, Carbon letter, 10(4), 300 (2009)
Jang EJ, Hyun SM, Choi DG, Park YB, Lee HJ, KSME, 7, 51 (2007)
JR AU, Bell Syst. Tech J., 34(1), 105 (1954)
Valdes LB, Proc Inst Radio Eng., 42(2), 420 (1954)
Smits VFM, Bell Syst. Tech. J., 37(3), 711 (1958)
Swartzendruber LJ, p. 199, NBS technical note, USA (1964)
Ehrstein JR, Crparlom MC, p.106, NIST, USA (1999)
YAMASHITA M, JJAP, 42(2), 695 (2003)
Kang JH, Yu KM, Koo KW, Han SO, KIEE., 60(7) (2011)
Wen CD, Mudawar I, Int. J. Heat Mass Transf., 49(23-24), 4279 (2006)
Kim JW, Kang DS, Lee HY, Lee SH, Ko SW, Roh JS, MRSK, in press.

[Related Articles]

[1] Schwartz B, Robbins H, J. Electrochem. Soc, 123(12), 1903 (1976)

[2] Kim CS, Park MW, KSPE, 27(4), 40 (2010)

[3] Kim SO, Lee SH, Kwak JS, KSME, 35(4), 401 (2011)

[4] Zuecoa J, Alhamab F, J. Quan Spectro & Rad Tran, 101, 73 (2006)

[5] Bellayer S, Gilman JW, Rahatekar SS, Bourbigot S, Flambard X, Hanssen LM, Guo H, Kumar S, Carbon, 45(12), 2417 (2007)

[6] Seo SK, Roh JS, Kim ES, Chi SH, Kim SH, Lee SW, Carbon letter, 10(4), 300 (2009)

[7] Jang EJ, Hyun SM, Choi DG, Park YB, Lee HJ, KSME, 7, 51 (2007)

[8] JR AU, Bell Syst. Tech J., 34(1), 105 (1954)

[9] Valdes LB, Proc Inst Radio Eng., 42(2), 420 (1954)

[10] Smits VFM, Bell Syst. Tech. J., 37(3), 711 (1958)

[11] Swartzendruber LJ, p. 199, NBS technical note, USA (1964)

[12] Ehrstein JR, Crparlom MC, p.106, NIST, USA (1999)

[13] YAMASHITA M, JJAP, 42(2), 695 (2003)

[14] Kang JH, Yu KM, Koo KW, Han SO, KIEE., 60(7) (2011)

[15] Wen CD, Mudawar I, Int. J. Heat Mass Transf., 49(23-24), 4279 (2006)

[16] Kim JW, Kang DS, Lee HY, Lee SH, Ko SW, Roh JS, MRSK, in press.